All MOSFET. 100P03 Datasheet


100P03 MOSFET. Datasheet pdf. Equivalent

Type Designator: 100P03

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 1560 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0028 Ohm

Package: DFN5X6-8

100P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


100P03 Datasheet (PDF)

1.1. rrh100p03.pdf Size:187K _rohm


4V Drive Pch MOSFET RRH100P03 ?Structure ?Dimensions (Unit : mm) Silicon P-channel MOSFET SOP8 ?Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Each lead has same dimensions ?Application Switching ?Packaging specifications ?Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 RR

1.2. ipb100p03p3l-04 ipi100p03p3l-04 ipp100p03p3l-04.pdf Size:195K _infineon


IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 OptiMOS®-P Trench Power-Transistor Product Summary V -30 V DS Features R (SMD version) 4 mΩ DS(on),max • P-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified I -100 A D • MSL1 up to 260°C peak reflow PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • 175°C operating temperature • Green package (RoHS Comp

 1.3. utt100p03.pdf Size:126K _utc


UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage and h

1.4. 100p03.pdf Size:3160K _goford


GOFORD 100P03 Features Pin Description VDSS RDS(ON) RDS(ON) ID D D @ (Typ) @ D -4.5V -10V (Typ) D -30V mΩ mΩ A 3.1 2.2 -100 G S S S DFN5x6-8 Super High Dense Cell Design Reliable and Rugged ( 5,6,7,8 ) Lead Free and Green Devices Available D D D D (RoHS Compliant) HBM ESD Capability level of 6.6KV typical Note : The diode connected between the gate and source

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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