10N03 Todos los transistores

 ..1. Size:2459K  goford
 10n03.pdf

GOFORD 10N03 DESCRIPTION The 10N03 uses advanced trench technology VDS RDS(ON) ID And design to provide excellent RDS (ON ) with 30V -- 10A Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES VDS = 30 V, ID = 10 A RDS(ON)

 0.1. Size:2101K  1
 cjac110n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.8m @10V 30 V 110A 3.5m @4.5V DESCRIPTION FEATURES

 0.2. Size:201K  motorola
 mmsf10n03z.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF10N03Z/D Advance Information MMSF10N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD Protected Gate SINGLE TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which utilize 10 AMPERES Motorola s High Cell Density TMOS process and conta

 0.3. Size:196K  motorola
 mmsf10n03zrev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF10N03Z/D Advance Information MMSF10N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD Protected Gate SINGLE TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which utilize 10 AMPERES Motorola s High Cell Density TMOS process and conta

 0.4. Size:257K  renesas
 np110n03pug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.5. Size:166K  rohm
 rsh110n03tb1.pdf

4V Drive Nch MOSFET RSH110N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package

 0.6. Size:98K  rohm
 rrs110n03tb1.pdf

RRS110N03 Transistor 4V Drive Nch MOSFET RRS110N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Applications Each lead has same dimensions Switching Equivalent circuit Packaging specifications (8) (7) (6) (5) (8) (7) (6) (5) Package Tapi

 0.7. Size:58K  rohm
 rss110n03fu6tb rss110n03tb.pdf

RSS110N03 Transistor Switching (30V, 11A) RSS110N03 External dimensions (Unit mm) Features 1) Low on-resistance. SOP8 5.0 0.2 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.2 0.1 Applications (1)Source (2)Source Power switching, DC/DC converter. (3)Source (4)Gate 0.4 0.1 1.27 (5)Drain 0.1 (6)Drain Each lead has same dim

 0.8. Size:69K  vishay
 sum110n03-03p.pdf

SUM110N03-03P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature V(BR)DSS (V) rDS(on) (W) ID (A)a D Optimized for Low-Side Synchronous Rectifier 0.0026 @ VGS = 10 V 110a D 100% Rg Tested 30 30 0.004 @ VGS = 4.5 V 110a APPLICATIONS D Desktop or Server CPU Core D TO-263 DRAIN connected to TAB G G D

 0.9. Size:74K  vishay
 sum110n03-04p.pdf

SUM110N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY D Optimized for Low-Side Synchronous Rectifier Operation D New Package with Low Thermal Resistance V(BR)DSS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.0042 @ VGS = 10 V 110 30 30 0.0065 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC C

 0.10. Size:671K  infineon
 bso110n03ms.pdf

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 0.11. Size:553K  infineon
 bso110n03msg.pdf

BSO110N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 11 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 13.9 GS 100% Avalanche tested I 12.1 A D N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) P

 0.12. Size:143K  utc
 ut110n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT110N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=26V * ID=110A * RDS(ON) =4.8m @VGS=10 V * RDS(ON) =7.

 0.13. Size:75K  secos
 sse110n03-03p.pdf

SSE110N03-03P 110A , 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a D High Cell Density trench process to provide low RDS(on) C and to ensure minimal power loss and heat dissipatio

 0.14. Size:2101K  jiangsu
 cjac110n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.8m @10V 30 V 110A 3.5m @4.5V DESCRIPTION FEATURES

 0.15. Size:996K  blue-rocket-elect
 brcs010n03szc.pdf

BRCS010N03SZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;

 0.16. Size:628K  crhj
 crtd110n03l.pdf

CRTD110N03L VDSS 30V Features RDS(on) Vgs=10V typ. 9m Lead free and Green Device Available max. 11m Low Rds-on to Minimize Conductive Loss RDS(on) Vgs=4.5V typ. 11m High avalanche Current max. 13m ID @ Vgs=10V (Silicon limited) 45A ID (Package limited) 20A Application Power Tool Boost Converters for LED Lighting SMPS TO252 Absolute Maximum Rat

 0.17. Size:1907K  kexin
 ndt110n03.pdf

SMD Type MOSFET N-Channel MOSFET NDT110N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 30V 4 ID = 110 A (VGS = 10V) RDS(ON) 4m (VGS = 10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 6m (VGS = 4.5V) High Power and current handing capability + 0.1 Lead free product is acquired 2.3 0.60- 0

 0.18. Size:2698K  maple semi
 sla10n03t.pdf

SLA10N03T 30V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 10.6A, 30V, RDS(on),Typ = 11m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 17nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in t

 0.19. Size:753K  semihow
 hrlo110n03k.pdf

June 2017 HRLO110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 13.8 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal

 0.20. Size:775K  semihow
 hrlf110n03k.pdf

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

 0.21. Size:519K  way-on
 wmr10n03t1.pdf

WMR10N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMR10N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V =30V, I = 10A DS D DFN2020-6L R

 0.22. Size:733K  wuxi china
 cs110n03a3.pdf

Silicon N-Channel Power MOSFET R CS110N03 A3 General Description VDSS 30 V CS110N03 A3, the silicon N-channel Enhanced ID 110 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.23. Size:659K  convert
 ctd10n033.pdf

nvert CTD10N033 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

 0.24. Size:547K  cn hmsemi
 hm110n03d.pdf

N-Channel Enhancement Mode Power MOSFET Description The HM110N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

 0.25. Size:754K  cn hmsemi
 hm10n03d.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =100A RDS(ON)