10N03 MOSFET. Datasheet pdf. Equivalent

10N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10N03 Datasheet (PDF)

1.1. sum110n03-03p.pdf Size:69K _upd

SUM110N03-03P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature V(BR)DSS (V) rDS(on) (W) ID (A)a D Optimized for Low-Side Synchronous Rectifier 0.0026 @ VGS = 10 V 110a D 100% Rg Tested 30 30 0.004 @ VGS = 4.5 V 110a APPLICATIONS D Desktop or Server CPU Core D TO-263 DRAIN connected to TAB G G D

1.2. sum110n03-04p.pdf Size:74K _upd

SUM110N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY D Optimized for Low-Side Synchronous Rectifier Operation D New Package with Low Thermal Resistance V(BR)DSS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.0042 @ VGS = 10 V 110 30 30 0.0065 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC C

 1.3. cs110n03a3.pdf Size:733K _update_mosfet

Silicon N-Channel Power MOSFET ○ R CS110N03 A3 General Description： VDSS 30 V CS110N03 A3, the silicon N-channel Enhanced ID 110 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.4. mmsf10n03zrev0.pdf Size:196K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF10N03Z/D Advance Information MMSF10N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD Protected Gate SINGLE TMOS POWER MOSFET EZFETs? are an advanced series of power MOSFETs which utilize 10 AMPERES Motorola�s High Cell Density TMOS process and contain mono

 1.5. mmsf10n03z.pdf Size:201K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF10N03Z/D Advance Information MMSF10N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD Protected Gate SINGLE TMOS POWER MOSFET EZFETs? are an advanced series of power MOSFETs which utilize 10 AMPERES Motorola�s High Cell Density TMOS process and contain mono

1.6. sum110n03-03p.pdf Size:69K _vishay

1.7. sum110n03-04p.pdf Size:74K _vishay

1.8. bso110n03ms rev1.1.pdf Size:671K _infineon

%" ! % %0<40= #:A0< "% & #<:/?.> %?88,;53F;A@ ) AF74AA= 0" +* ' 0 11 mW D n) m x G S 'AI !* ( 8AD #;9: !D7CG7@5K .( +. 0 1 G S H3>3@5:7 F7EF76 1 1 D S ) 5:3@@7> S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( G?D O? D n) S , G3>;8;76 8AD 5A@EG?7D >7H7> 3BB>;53F;A@ S +4 8D77 B>3F;@9 - A#. 5A?B>

1.9. ut110n03.pdf Size:143K _utc

UNISONIC TECHNOLOGIES CO., LTD UT110N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=26V * ID=110A * RDS(ON) =4.8m?@VGS=10 V * RDS(ON) =7.0m?@V

1.10. sse110n03-03p.pdf Size:75K _secos

SSE110N03-03P 110A , 30V , RDS(ON) 2.5m? ? ? ? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a D High Cell Density trench process to provide low RDS(on) C and to ensure minimal power loss and heat dissipation. B R

1.11. 10n03.pdf Size:2459K _goford

GOFORD 10N03 DESCRIPTION The 10N03 uses advanced trench technology VDS RDS(ON) ID And design to provide excellent RDS (ON ) with 30V -- 10A Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES � VDS = 30 V, ID = 10 A RDS(ON) < 13.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson Marking and pin Assignment � Fully characterized

1.12. ndt110n03.pdf Size:1907K _kexin

SMD Type MOSFET N-Channel MOSFET NDT110N03 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 ■ Features 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) = 30V 4 ● ID = 110 A (VGS = 10V) ● RDS(ON) ＜ 4mΩ (VGS = 10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) ＜ 6mΩ (VGS = 4.5V) ● High Power and current handing capability + 0.1 ● Lead free product is acquired 2.3 0.60- 0

LIST

Last Update

MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |