All MOSFET. 10N03 Datasheet

 

10N03 MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N03

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0135 Ohm

Package: SOP8

10N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10N03 Datasheet (PDF)

1.1. sum110n03-03p.pdf Size:69K _upd

10N03
10N03

SUM110N03-03P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature V(BR)DSS (V) rDS(on) (W) ID (A)a D Optimized for Low-Side Synchronous Rectifier 0.0026 @ VGS = 10 V 110a D 100% Rg Tested 30 30 0.004 @ VGS = 4.5 V 110a APPLICATIONS D Desktop or Server CPU Core D TO-263 DRAIN connected to TAB G G D

1.2. sum110n03-04p.pdf Size:74K _upd

10N03
10N03

SUM110N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY D Optimized for Low-Side Synchronous Rectifier Operation D New Package with Low Thermal Resistance V(BR)DSS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.0042 @ VGS = 10 V 110 30 30 0.0065 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC C

 1.3. cs110n03a3.pdf Size:733K _update_mosfet

10N03
10N03

Silicon N-Channel Power MOSFET ○ R CS110N03 A3 General Description: VDSS 30 V CS110N03 A3, the silicon N-channel Enhanced ID 110 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.4. mmsf10n03zrev0.pdf Size:196K _motorola

10N03
10N03

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF10N03Z/D Advance Information MMSF10N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD Protected Gate SINGLE TMOS POWER MOSFET EZFETs? are an advanced series of power MOSFETs which utilize 10 AMPERES Motorolas High Cell Density TMOS process and contain mono

 1.5. mmsf10n03z.pdf Size:201K _motorola

10N03
10N03

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF10N03Z/D Advance Information MMSF10N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD Protected Gate SINGLE TMOS POWER MOSFET EZFETs? are an advanced series of power MOSFETs which utilize 10 AMPERES Motorolas High Cell Density TMOS process and contain mono

1.6. sum110n03-03p.pdf Size:69K _vishay

10N03
10N03

1.7. sum110n03-04p.pdf Size:74K _vishay

10N03
10N03

1.8. bso110n03ms rev1.1.pdf Size:671K _infineon

10N03
10N03

%" ! % %0<40= #:A0< "% & #<:/?.> %?88,;53F;A@ ) AF74AA= 0" +* ' 0 11 mW D n) m x G S 'AI !* ( 8AD #;9: !D7CG7@5K .( +. 0 1 G S H3>3@5:7 F7EF76 1 1 D S ) 5:3@@7> S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( G?D O? D n) S , G3>;8;76 8AD 5A@EG?7D >7H7> 3BB>;53F;A@ S +4 8D77 B>3F;@9 - A#. 5A?B>

1.9. ut110n03.pdf Size:143K _utc

10N03
10N03

UNISONIC TECHNOLOGIES CO., LTD UT110N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=26V * ID=110A * RDS(ON) =4.8m?@VGS=10 V * RDS(ON) =7.0m?@V

1.10. sse110n03-03p.pdf Size:75K _secos

10N03
10N03

SSE110N03-03P 110A , 30V , RDS(ON) 2.5m? ? ? ? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a D High Cell Density trench process to provide low RDS(on) C and to ensure minimal power loss and heat dissipation. B R

1.11. 10n03.pdf Size:2459K _goford

10N03
10N03

GOFORD 10N03 DESCRIPTION The 10N03 uses advanced trench technology VDS RDS(ON) ID And design to provide excellent RDS (ON ) with 30V -- 10A Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES � VDS = 30 V, ID = 10 A RDS(ON) < 13.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson Marking and pin Assignment � Fully characterized

1.12. ndt110n03.pdf Size:1907K _kexin

10N03
10N03

SMD Type MOSFET N-Channel MOSFET NDT110N03 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 ■ Features 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) = 30V 4 ● ID = 110 A (VGS = 10V) ● RDS(ON) < 4mΩ (VGS = 10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) < 6mΩ (VGS = 4.5V) ● High Power and current handing capability + 0.1 ● Lead free product is acquired 2.3 0.60- 0

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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