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GOFORD 110N10 DESCRIPTION The110N10 uses advanced trench technology and VDSS RDS(ON) ID design to provide excellent R with low gate DS(ON) 100V 7.8m 110A charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =110A RDS(ON)

STL110N10F7 N-channel 100 V, 0.005 typ., 107 A, STripFET H7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT 0.006 STL110N10F7 100 V 107 A 136 W (VGS= 10 V) 1 2 Among the lowest RDS(on) on the market 3 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 m typ.,110 A, STripFET F7 Power MOSFETs in H PAK-2 and H PAK-6 packages Datasheet - production data TAB Features TAB RDS(on) Order code VDS ID PTOT max. 7 2 STH110N10F7-2 3 1 100 V 6.5 m 110 A 150 W 1 STH110N10F7-6 H2PAK-6 H2PAK-2 Figure 1 Internal schematic diagram Among the lowest RDS(on) on the mar

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STF110N10F7 45 A 30 W TAB 100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance 3 3 2 2 1 1 100% avalanche tested TO-220FP TO-220 Applications Sw

SUM110N10-09 Vishay Siliconix N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) New Package with Low Thermal Resistance 100 0.0095 at VGS = 10 V 110a 100 % Rg Tested D TO-263 G G D S Top View S Ordering Information SUM110N10-09-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC =

SQM110N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 100 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0095 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single 100 % Rg and UIS Tested D

IXTQ 110N10P VDSS = 100 V PolarHTTM IXTT 110N10P ID25 = 110 A Power MOSFET RDS(on) 15 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C 110 A (T

IXFH 110N10P VDSS = 100 V PolarHTTM HiPerFET IXFV 110N10P ID25 = 110 A Power MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100

IXFC 110N10P VDSS = 100 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET RDS(on) 17 m ISOPLUS220TM trr 150 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ

ME110N10T/ME110N10F N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6.2m @VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h

FIR110N10PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR110N10PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

HGN110N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 9.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 62 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

HGB110N10SL , HGP110N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.7 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 10.7 RDS(on),typ m Enhanced Avalanche Ruggedness 9.0 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 11 RDS(on),typ m Lead Free, Halog

HGA110N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level VGS=10V 9.0 RDS(on),typ m Enhanced Body diode dv/dt capability VGS=4.5V 11 RDS(on),typ m Enhanced Avalanche Ruggedness 37.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS

APG110N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG110N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =110A DS D R