All MOSFET. 110N10 Datasheet

 

110N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 110N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 220 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 380 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO220

110N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

110N10 Datasheet (PDF)

1.1. stl110n10f7.pdf Size:1029K _update

110N10
110N10

STL110N10F7 N-channel 100 V, 0.005 Ω typ., 107 A, STripFET™ H7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT 0.006 Ω STL110N10F7 100 V 107 A 136 W (VGS= 10 V) 1 2 • Among the lowest RDS(on) on the market 3 4 • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche

1.2. sth110n10f7-2 sth110n10f7-6.pdf Size:858K _update

110N10
110N10

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data TAB Features TAB RDS(on) Order code VDS ID PTOT max. 7 2 STH110N10F7-2 3 1 100 V 6.5 mΩ 110 A 150 W 1 STH110N10F7-6 H2PAK-6 H2PAK-2 Figure 1: Internal schematic diagram  Among the lowest RDS(on) on the mar

 1.3. stf110n10f7.pdf Size:1225K _update

110N10
110N10

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STF110N10F7 45 A 30 W TAB 100 V 0.007 Ω STP110N10F7 110 A 150 W • Ultra low on-resistance 3 3 2 2 1 1 • 100% avalanche tested TO-220FP TO-220 Applications • Sw

1.4. sum110n10-09.pdf Size:164K _upd

110N10
110N10

SUM110N10-09 Vishay Siliconix N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) (Ω)ID (A) • New Package with Low Thermal Resistance 100 0.0095 at VGS = 10 V 110a • 100 % Rg Tested D TO-263 G G D S Top View S Ordering Information: SUM110N10-09-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC =

 1.5. stf110n10f7.pdf Size:1225K _upd

110N10
110N10

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STF110N10F7 45 A 30 W TAB 100 V 0.007 Ω STP110N10F7 110 A 150 W • Ultra low on-resistance 3 3 2 2 1 1 • 100% avalanche tested TO-220FP TO-220 Applications • Sw

1.6. sqm110n10-09.pdf Size:167K _upd-mosfet

110N10
110N10

SQM110N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 100 • TrenchFET® Power MOSFET RDS(on) () at VGS = 10 V 0.0095 • Package with Low Thermal Resistance ID (A) 120 • AEC-Q101 Qualifiedd Configuration Single • 100 % Rg and UIS Tested D •

1.7. stp110n10f7.pdf Size:1225K _upd-mosfet

110N10
110N10

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STF110N10F7 45 A 30 W TAB 100 V 0.007 Ω STP110N10F7 110 A 150 W • Ultra low on-resistance 3 3 2 2 1 1 • 100% avalanche tested TO-220FP TO-220 Applications • Sw

1.8. ixfc110n10p.pdf Size:230K _ixys

110N10
110N10

IXFC 110N10P VDSS = 100 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET ? ? RDS(on) ? 17 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 150 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100

1.9. ixfh110n10p ixfv110n10p.pdf Size:309K _ixys

110N10
110N10

IXFH 110N10P VDSS = 100 V PolarHTTM HiPerFET IXFV 110N10P ID25 = 110 A Power MOSFET ? ? IXFV 110N10PS RDS(on) ? 15 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 150 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGSS Continuous 20 V G VGSM Tran

1.10. ixtq110n10p ixtt110n10p.pdf Size:170K _ixys

110N10
110N10

IXTQ 110N10P VDSS = 100 V PolarHTTM IXTT 110N10P ID25 = 110 A Power MOSFET ? ? RDS(on) ? 15 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C 110 A (TAB) S ID(RMS) External lead cu

1.11. 110n10.pdf Size:2111K _goford

110N10
110N10

GOFORD 110N10 DESCRIPTION The110N10 uses advanced trench technology and VDSS RDS(ON) ID design to provide excellent R with low gate DS(ON) 100V 7.8mΩ 110A charge. It can be used in a wide variety of applications. GENERAL FEATURES • VDS =100V,ID =110A RDS(ON) < 9mΩ @ VGS=10V • High density cell design for ultra low Rdson. • Fully characterized avalanche voltage and current.

Datasheet: G11 , G16 , G17 , 03N06 , 05N06 , 100N03 , 100P03 , 10N03 , STF5N52U , 11N10C , 120N03 , 1402TR , 1404TR , 140N10 , ECYA , G1002 , G1002L .

 
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