120N03 Todos los transistores

 ..1. Size:1726K  goford
 120n03.pdf

GOFORD 120N03 DESCRIPTION The 120N03 uses advanced trench technology VDS RDS(ON) ID And design to provide excellent RDS (ON ) with 30V 2.5m 120A Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES VDS = 30 V, ID = 120 A RDS(ON)

 0.1. Size:57K  rohm
 rss120n03fu6tb rss120n03tb.pdf

RSS120N03 Transistors Switching (30V, 12A) RSS120N03 External dimensions (Unit mm) Features 1) Low on-resistance. SOP8 2) Built-in G-S Protection Diode. 5.0 0.2 3) Small and Surface Mount Package (SOP8). Applications 0.2 0.1 Power switching, DC / DC converter. 0.4 0.1 1.27 0.1 Structure Each lead has same dimensions Silicon N-channel MOS FET Equivale

 0.2. Size:168K  vishay
 sqm120n03-1m5l.pdf

SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.0015 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0020 Package with Low Thermal Resistance ID (A) 120 100 % Rg and UIS Tested Configuration Single AEC-Q10

 0.3. Size:520K  infineon
 bsc120n03lsg.pdf

BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

 0.4. Size:524K  infineon
 bsc120n03msg.pdf

BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

 0.5. Size:485K  infineon
 bsc120n03ms.pdf

BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

 0.6. Size:686K  infineon
 bsc120n03ls .pdf

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 0.7. Size:481K  infineon
 bsc120n03ls.pdf

BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

 0.8. Size:678K  infineon
 bsc120n03msg7.pdf

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 0.9. Size:277K  infineon
 ipb120n03s4l-03.pdf

IPB120N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V 30 V DS N-channel - Enhancement mode R 3 mW DS(on),max Automotive AEC Q101 qualified I 120 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 Green package (lead free) 100% Avalanche tested Type Package Ordering Code Marking IPB120N03S4L-03 PG-TO263-3-2 -

 0.10. Size:190K  utc
 ut120n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT120N03 Preliminary Power MOSFET 120A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT120N03 is a N-channel power MOSFET using UTC s 1 advanced trench technology to provide customers with a minimum TO-220 on-state resistance and superior switching performance. The UTC UT120N03 is generally applied in DC to DC convertors or synchronous recti

 0.11. Size:1299K  blue-rocket-elect
 brcs120n03ya.pdf

BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN3 3-8L N MOS Double N-CHANNEL MOSFET in a PDFN3 3-8L Plastic Package. / Features VDS (V) = 30V ID =24A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications Intended for use in g

 0.12. Size:693K  blue-rocket-elect
 brcs120n03zj.pdf

 0.13. Size:769K  blue-rocket-elect
 brcs120n03zb.pdf

BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications

 0.14. Size:1747K  blue-rocket-elect
 brcs120n03dp.pdf

BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DS I =42A (V = 20V) D GS R DS(ON)@10V 12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su

 0.15. Size:1257K  blue-rocket-elect
 brcs120n03yb.pdf

 0.16. Size:1114K  feihonltd
 fhu120n03c fhd120n03c.pdf

N N-CHANNEL MOSFET FHU120N03C/FHD120N03C MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 30 V Crss ( 120pF) Low Crss (typical 120pF ) Rdson-typ @Vgs=10V 3.0m Fast switching Rdson-typ @Vgs=4.5V 3.7m 100% 100% avalanche teste

 0.17. Size:4803K  maple semi
 sld120n03tb.pdf

SLD120N03TB 30V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 111A, 30V, RDS(on),Typ = 2.5m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 65nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in

 0.18. Size:1172K  slkor
 sl120n03r.pdf

SL120N03R N-Channel Enhancement Mode Power MOSFET Description This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30V I

 0.19. Size:578K  allpower
 ap120n03.pdf

 0.20. Size:1631K  allpower
 ap120n03k.pdf

 0.21. Size:879K  jiejie micro
 jmtk120n03a.pdf

JMTK120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 20A Load Switch RDS(ON)

 0.22. Size:526K  jiejie micro
 jmtq120n03d.pdf

JMTQ120N03D Description JMT N-channel Enhancement Mode Power MOSFET Features Applications Load Switch 30V, 15A PWM Application RDS(ON)

 0.23. Size:424K  jiejie micro
 jmtv120n03a.pdf

JMTV120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 12A Load Switch RDS(ON)

 0.24. Size:479K  jiejie micro
 jmtq120n03a.pdf

JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 18A Load Switch RDS(ON)

 0.25. Size:895K  cn hunteck
 hts120n03.pdf

HTS120N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, logic level 9.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 14.5 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 12 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu

 0.26. Size:902K  cn hunteck
 htm120n03.pdf

HTM120N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 9.7 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 18.5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DFN3x3 DC/DC in Telecoms and Inductrial Gate Src Part Number

 0.27. Size:1047K  cn hunteck
 htm120n03p.pdf

HTM120N03P P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 8.4 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 11 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 28 A ID Lead Free Application Hard Switching and High Speed Circuit Drain DFN3.3x3.3 DC/DC in Telecoms and Inductrial Gate Src Part Number Pa

 0.28. Size:1414K  cn vbsemi
 vbzqa120n03.pdf

VBZQA120N03 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 160 APPLICATIONS 30 18 nC 0.0025 at VGS = 4.5 V 130 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOLU

 0.29. Size:449K  cn wuxi unigroup
 ttd120n03at ttp120n03at.pdf

TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package

 0.30. Size:594K  cn hmsemi
 hm120n03.pdf

HM120N03 N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

 0.31. Size:573K  cn hmsemi
 hms120n03d.pdf

HMS120N03D N-Channel Super Trench Power MOSFET Description The HMS120N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 0.32. Size:559K  cn hmsemi
 hm120n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

 0.33. Size:1444K  cn apm
 ap120n03nf.pdf

AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

 0.34. Size:1481K  cn apm
 ap120n03d.pdf

AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R