140N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORD140N10Description Features VDSS RDS(ON) ID @10V (typ)100V m 6.2 140A Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current Application Power Supply UPS Power ToolTO-220Absolute Maximum Ratings (TA=25C unless otherwise noted) Symbol Parameter Maximum UnitVDSS Drain-to-Source V

TMQFETFQH140N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 470 pF)This advanced technology has been especially tailored to

September 2000TMQFETQFETQFETQFETFQA140N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 470 pF)This advanced technology has

IXTQ 140N10P VDSS = 100 VPolarHTTMIXTT 140N10P ID25 = 140 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C 140 AID(RMS)

IXFH 140N10P VDSS = 100 VPolarHVTM HiPerFETIXFT 140N10P ID25 = 140 APower MOSFETs RDS(on) 11 m N-Channel Enhancement Mode trr 150 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-247 (IXFH)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continu

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

CEP140N10/CEB140N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 137A, RDS(ON) = 7.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

CS140N10A N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 75 A IDM 140 A VGS 17 V Tjm +150 Tstg -55 +150 RthJC 0.4 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=39A 0.02 VGS th VDS=VGS,I

RU140N10R N-Channel Advanced Power MOSFET Features Pin Description 100V/140A RDS (ON)=6.5m(Typ.) @ VGS=10V Ultra Low On-Resistance Low Gate Charge Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications Switching applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA

TMB140N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter

isc N-Channel MOSFET Transistor FQA140N10FEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in audio amplifier,high efficiency switching D