140N10 Todos los transistores

 

140N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 140N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 215 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 140 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 116 nS

Conductancia de drenaje-sustrato (Cd): 942 pF

Resistencia drenaje-fuente RDS(on): 0.0072 Ohm

Empaquetado / Estuche: TO220

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140N10 Datasheet (PDF)

1.1. ru140n10r.pdf Size:330K _upd-mosfet

140N10
140N10

RU140N10R N-Channel Advanced Power MOSFET Features Pin Description • 100V/140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Low Gate Charge • Fast Switching and Fully Avalanche Rated TO-220 • 100% avalanche tested Applications ·Switching applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA

1.2. cs140n10a.pdf Size:109K _update_mosfet

140N10

CS140N10A 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 150 W 线性降低系数 1.2 W/℃ ID (VGS=10V,TC=25℃) 75 A 极 限 IDM 140 A 值 VGS ±17 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.4 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 100 V RDS on) VGS=10V,ID=39A 0.02 Ω ( 电 VGS th) VDS=VGS,I

 1.3. fqh140n10.pdf Size:680K _fairchild_semi

140N10
140N10

TM QFET FQH140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 140A, 100V, RDS(on) = 0.01Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 220 nC) planar stripe, DMOS technology. • Low Crss ( typical 470 pF) This advanced technology has been especially tailored to •

1.4. fqa140n10.pdf Size:687K _fairchild_semi

140N10
140N10

September 2000 TM QFET QFET QFET QFET FQA140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 470 pF) This advanced technology has been especia

 1.5. ixfh140n10p ixft140n10p.pdf Size:177K _ixys

140N10
140N10

IXFH 140N10P VDSS = 100 V PolarHVTM HiPerFET IXFT 140N10P ID25 = 140 A Power MOSFETs ? ? RDS(on) ? 11 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode trr ? 150 ns ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V G D (

1.6. ixtq140n10p ixtt140n10p.pdf Size:171K _ixys

140N10
140N10

IXTQ 140N10P VDSS = 100 V PolarHTTM IXTT 140N10P ID25 = 140 A Power MOSFET ? ? RDS(on) ? 11 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 140 A ID(RMS) External lead current limit 75 A

1.7. cep140n10 ceb140n10.pdf Size:419K _cet

140N10
140N10

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note

1.8. 140n10.pdf Size:2116K _goford

140N10
140N10

GOFORD 140N10 Description Features  VDSS RDS(ON) ID @ 10V (typ) 100V m 6.2 Ω 140A  Lead free and Green Device Available  Low Rds-on to Minimize Conductive Loss  High avalanche Current Application  Power Supply  UPS  Power Tool TO-220 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Maximum Unit VDSS Drain-to-Source V

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