140N10 Todos los transistores

GOFORD 140N10 Description Features VDSS RDS(ON) ID @ 10V (typ) 100V m 6.2 140A Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current Application Power Supply UPS Power Tool TO-220 Absolute Maximum Ratings (TA=25 C unless otherwise noted) Symbol Parameter Maximum Unit VDSS Drain-to-Source V... See More ⇒

TM QFET FQH140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 470 pF) This advanced technology has been especially tailored to ... See More ⇒

September 2000 TM QFET QFET QFET QFET FQA140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 470 pF) This advanced technology has... See More ⇒

IXTQ 140N10P VDSS = 100 V PolarHTTM IXTT 140N10P ID25 = 140 A Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 140 A ID(RMS) ... See More ⇒

IXFH 140N10P VDSS = 100 V PolarHVTM HiPerFET IXFT 140N10P ID25 = 140 A Power MOSFETs RDS(on) 11 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continu... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise... See More ⇒

CS140N10A N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 75 A IDM 140 A VGS 17 V Tjm +150 Tstg -55 +150 RthJC 0.4 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=39A 0.02 VGS th VDS=VGS,I... See More ⇒

DH140N10B&DH140N10D 68A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 11.0m DS(on) (TYP) standard. 1 3 S I = 68A D 2 Features Low on resistance Low gate charge Fast s... See More ⇒

RU140N10R N-Channel Advanced Power MOSFET Features Pin Description 100V/140A RDS (ON)=6.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Low Gate Charge Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications Switching applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA... See More ⇒

TMB140N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter... See More ⇒

isc N-Channel MOSFET Transistor FQA140N10 FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in audio amplifier, high efficiency switching D... See More ⇒