G1006 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G1006  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.4 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO92

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G1006 datasheet

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 g1006.pdf pdf_icon

G1006

GOFORD G1006 D Description The G1006 uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 6A m 100V 110 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

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G1006

GOFORD G1006LE N-Channel Trench MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features VDS 100V ID (at VGS = 10V) 3A G1006 RDS(ON) (at VGS = 10V)

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G1006

GOFORD G1006A D Description The G1006A uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected. It is ESD protected. S General Features Schematic diagram VDS = 100V,ID = 6A R

Otros transistores... 120N03, 1402TR, 1404TR, 140N10, ECYA, G1002, G1002L, G1003A, 13N50, G1006A, G1008, G2002, G2003, G2005, G2005K, G2009, G2009K