G1006 PDF and Equivalents Search

 

G1006 Specs and Replacement

Type Designator: G1006

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO92

G1006 substitution

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G1006 datasheet

 ..1. Size:1363K  goford
 g1006.pdf pdf_icon

G1006

GOFORD G1006 D Description The G1006 uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 6A m 100V 110 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren... See More ⇒

 0.1. Size:651K  goford
 g1006le.pdf pdf_icon

G1006

GOFORD G1006LE N-Channel Trench MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features VDS 100V ID (at VGS = 10V) 3A G1006 RDS(ON) (at VGS = 10V) ... See More ⇒

 0.2. Size:2091K  goford
 g1006a.pdf pdf_icon

G1006

GOFORD G1006A D Description The G1006A uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected. It is ESD protected. S General Features Schematic diagram VDS = 100V,ID = 6A R ... See More ⇒

Detailed specifications: 120N03 , 1402TR , 1404TR , 140N10 , ECYA , G1002 , G1002L , G1003A , IRFP260 , G1006A , G1008 , G2002 , G2003 , G2005 , G2005K , G2009 , G2009K .

History: FCB20N60FF085

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