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IRF512 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF512

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 20 W

Voltaje máximo drenador - fuente |Vds|: 100 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 3.5 A

Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Tiempo de subida (tr): 25(max) nS

Conductancia de drenaje-sustrato (Cd): 100(max) pF

Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm

Paquete / Cubierta: TO220AB

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IRF512 Datasheet (PDF)

 ..1. Size:65K  1
irf510 irf511 irf512 irf513.pdf

IRF512
IRF512

 9.1. Size:239K  international rectifier
irf510pbf.pdf

IRF512
IRF512

PD - 95364IRF510PbF Lead-Free6/10/04Document Number: 91015 www.vishay.com1IRF510PbFDocument Number: 91015 www.vishay.com2IRF510PbFDocument Number: 91015 www.vishay.com3IRF510PbFDocument Number: 91015 www.vishay.com4IRF510PbFDocument Number: 91015 www.vishay.com5IRF510PbFDocument Number: 91015 www.vishay.com6IRF510PbFTO-220AB Package Outline

 9.2. Size:325K  international rectifier
irf510s.pdf

IRF512
IRF512

PD - 95540IRF510SPbF Lead-FreeSMD-2207/21/04Document Number: 91016 www.vishay.com1IRF510SPbFDocument Number: 91016 www.vishay.com2IRF510SPbFDocument Number: 91016 www.vishay.com3IRF510SPbFDocument Number: 91016 www.vishay.com4IRF510SPbFDocument Number: 91016 www.vishay.com5IRF510SPbFDocument Number: 91016 www.vishay.com6IRF510SPbFPeak Diode

 9.3. Size:175K  international rectifier
irf510.pdf

IRF512
IRF512

 9.4. Size:151K  fairchild semi
irf510.pdf

IRF512
IRF512

 9.5. Size:252K  fairchild semi
irf510a.pdf

IRF512
IRF512

IRF510AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.4 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 5.6 An Improved Gate Chargen Extended Safe Operating AreaTO-220n 175C Operating Temperaturen Lower Leakage Current : 10 A (Max.) @ VDS = 100Vn Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. Sour

 9.6. Size:937K  samsung
irf510a.pdf

IRF512
IRF512

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.6 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximu

 9.7. Size:279K  vishay
irf510 sihf510.pdf

IRF512
IRF512

IRF510, SiHF510www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 100Available Repetitive avalanche ratedRDS(on) ()VGS = 10 V 0.54 175 C operating temperatureAvailableQg max. (nC) 8.3 Fast switchingQgs (nC) 2.3 Ease of parallelingQgd (nC) 3.8 Simple drive requirementsConfiguration Single

 9.8. Size:201K  vishay
irf510pbf sihf510.pdf

IRF512
IRF512

IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli

 9.9. Size:210K  vishay
irf510s sihf510s.pdf

IRF512
IRF512

IRF510S, SiHF510Swww.vishay.comVishay SiliconixPower MOSFETFEATURESD Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt ratingAvailable Repetitive avalanche ratedG 175 C operating temperatureAvailable Fast switching Ease of parallelingDG Material categorization: for definitions of complianceSSplease see www.

 9.10. Size:196K  vishay
irf510strlpbf irf510strrpbf sihf510s.pdf

IRF512
IRF512

IRF510S, SiHF510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 175 C Operating TemperatureQgd (nC) 3.8 Fast Switching Ea

 9.11. Size:151K  infineon
irf510 sihf510.pdf

IRF512
IRF512

IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli

Otros transistores... IRF460 , IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , 10N65 , IRF513 , IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 .

 

 
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