All MOSFET. IRF512 Datasheet

 

IRF512 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF512

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 43 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 4.9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO220

IRF512 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF512 Datasheet (PDF)

5.1. irf510.pdf Size:151K _fairchild_semi

IRF512
IRF512

5.2. irf510a.pdf Size:252K _fairchild_semi

IRF512
IRF512

IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 ? n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175C Operating Temperature n Lower Leakage Current : 10 ?A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absol

5.3. irf510pbf.pdf Size:239K _international_rectifier

IRF512
IRF512

PD - 95364 IRF510PbF Lead-Free 6/10/04 Document Number: 91015 www.vishay.com 1 IRF510PbF Document Number: 91015 www.vishay.com 2 IRF510PbF Document Number: 91015 www.vishay.com 3 IRF510PbF Document Number: 91015 www.vishay.com 4 IRF510PbF Document Number: 91015 www.vishay.com 5 IRF510PbF Document Number: 91015 www.vishay.com 6 IRF510PbF TO-220AB Package Outline Dimen

5.4. irf510s.pdf Size:325K _international_rectifier

IRF512
IRF512

PD - 95540 IRF510SPbF Lead-Free SMD-220 7/21/04 Document Number: 91016 www.vishay.com 1 IRF510SPbF Document Number: 91016 www.vishay.com 2 IRF510SPbF Document Number: 91016 www.vishay.com 3 IRF510SPbF Document Number: 91016 www.vishay.com 4 IRF510SPbF Document Number: 91016 www.vishay.com 5 IRF510SPbF Document Number: 91016 www.vishay.com 6 IRF510SPbF Peak Diode Reco

5.5. irf510.pdf Size:175K _international_rectifier

IRF512
IRF512

5.6. irf510a.pdf Size:937K _samsung

IRF512
IRF512

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

Datasheet: IRF460 , IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , 2SK3562 , IRF513 , IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 .

 


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