IRF512 Datasheet and Replacement
Type Designator: IRF512
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 3.5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 25(max)
nS
Cossⓘ -
Output Capacitance: 100(max)
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO220AB
-
MOSFET ⓘ Cross-Reference Search
IRF512 Datasheet (PDF)
9.1. Size:239K international rectifier
irf510pbf.pdf 
PD - 95364IRF510PbF Lead-Free6/10/04Document Number: 91015 www.vishay.com1IRF510PbFDocument Number: 91015 www.vishay.com2IRF510PbFDocument Number: 91015 www.vishay.com3IRF510PbFDocument Number: 91015 www.vishay.com4IRF510PbFDocument Number: 91015 www.vishay.com5IRF510PbFDocument Number: 91015 www.vishay.com6IRF510PbFTO-220AB Package Outline
9.3. Size:325K international rectifier
irf510s.pdf
PD - 95540IRF510SPbF Lead-FreeSMD-2207/21/04Document Number: 91016 www.vishay.com1IRF510SPbFDocument Number: 91016 www.vishay.com2IRF510SPbFDocument Number: 91016 www.vishay.com3IRF510SPbFDocument Number: 91016 www.vishay.com4IRF510SPbFDocument Number: 91016 www.vishay.com5IRF510SPbFDocument Number: 91016 www.vishay.com6IRF510SPbFPeak Diode
9.4. Size:252K fairchild semi
irf510a.pdf
IRF510AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.4 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 5.6 An Improved Gate Chargen Extended Safe Operating AreaTO-220n 175C Operating Temperaturen Lower Leakage Current : 10 A (Max.) @ VDS = 100Vn Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. Sour
9.6. Size:937K samsung
irf510a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.6 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximu
9.7. Size:201K vishay
irf510pbf sihf510.pdf
IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli
9.8. Size:196K vishay
irf510strlpbf irf510strrpbf sihf510s.pdf
IRF510S, SiHF510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 175 C Operating TemperatureQgd (nC) 3.8 Fast Switching Ea
9.9. Size:210K vishay
irf510s sihf510s.pdf
IRF510S, SiHF510Swww.vishay.comVishay SiliconixPower MOSFETFEATURESD Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt ratingAvailable Repetitive avalanche ratedG 175 C operating temperatureAvailable Fast switching Ease of parallelingDG Material categorization: for definitions of complianceSSplease see www.
9.10. Size:279K vishay
irf510 sihf510.pdf
IRF510, SiHF510www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 100Available Repetitive avalanche ratedRDS(on) ()VGS = 10 V 0.54 175 C operating temperatureAvailableQg max. (nC) 8.3 Fast switchingQgs (nC) 2.3 Ease of parallelingQgd (nC) 3.8 Simple drive requirementsConfiguration Single
9.11. Size:151K infineon
irf510 sihf510.pdf
IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli
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