G120N04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G120N04
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 970 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO220 TO251 TO252
Búsqueda de reemplazo de G120N04 MOSFET
G120N04 Datasheet (PDF)
g120n04 to252 to251.pdf
GOFORDG120N04Description The 120N04 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 12040V 5.6 3.3 A High density cell design for ultra low Rdson Fully characterized
g120n04 to220.pdf
GOFORDG120N04Description The G120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized ava
g120n04a to220.pdf
GOFORDG120N04ADescription The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized a
g120n04a.pdf
GOFORDG120N04ADescription The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized a
Otros transistores... G2304 , G2305 , G2502 , G2503 , G100N03 , G100N04 , G10N10 , G110N06 , 13N50 , G120N04A , G15P04 , G1815 , G1816 , G1825 , 15P03 , 16N10 , 18N10 .
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