G120N04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G120N04
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 970 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO220 TO251 TO252
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G120N04 datasheet
g120n04 to252 to251.pdf
GOFORD G120N04 Description The 120N04 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 120 40V 5.6 3.3 A High density cell design for ultra low Rdson Fully characterized
g120n04 to220.pdf
GOFORD G120N04 Description The G120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID Schematic diagram @ (Typ) @10V (Typ) 4.5V 40V 5.5m 3.2m 120 A High density cell design for ultra low Rdson Fully characterized ava
g120n04a to220.pdf
GOFORD G120N04A Description The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID Schematic diagram @ (Typ) @10V (Typ) 4.5V 40V 5.5m 3.2m 120 A High density cell design for ultra low Rdson Fully characterized a
g120n04a.pdf
GOFORD G120N04A Description The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID Schematic diagram @ (Typ) @10V (Typ) 4.5V 40V 5.5m 3.2m 120 A High density cell design for ultra low Rdson Fully characterized a
Otros transistores... G2304 , G2305 , G2502 , G2503 , G100N03 , G100N04 , G10N10 , G110N06 , TK10A60D , G120N04A , G15P04 , G1815 , G1816 , G1825 , 15P03 , 16N10 , 18N10 .
History: G10N10
History: G10N10
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