G120N04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORDG120N04Description The 120N04 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 12040V 5.6 3.3 A High density cell design for ultra low Rdson Fully characterized

GOFORDG120N04Description The G120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized ava

GOFORDG120N04ADescription The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized a

GOFORDG120N04ADescription The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized a

Advance Technical InformationGenX3TM 1200V VCES = 1200VMMIX1G120N120A3V1IGBT w/ DiodeIC110 = 105AVCE(sat) 2.2V(Electrically Isolated Tab)CUltra-Low-Vsat PT IGBT for3kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 V Isolated TabVGES Continuous 20 VCVGEM Tr

AP05G120NSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features VCES 1200V High Speed Switching IC 10.5A NPT Technology RoHS Compliant & Halogen-FreeGCTO-3PEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 VVGE Gate-Emitter Voltage +30 VIC@TC=25 Col

WGW15G120NWGW15G120NWGW15G120NWGW15G120NLow Loss IGBTLow Loss IGBTLow Loss IGBTLow Loss IGBTFeatures 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100CE(sat) C low Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMIPb-free lead plating; RoHS compliantApplications General purpose inverterFrequency convertersI

TSD120N10AT,TSP120N10AT,TSG120N10ATWuxi Unigroup Microelectronics CO.,LTD.100V N-Channel SGT MOSFETGeneral DescriptionProduct SummaryVDS 100V l Trench Power SGT technologyID (at VGS =10V) 55Al Very low on-resistance RDS(ON)RDS(ON) (at VGS =10V)