G120N04 MOSFET Datasheet: N-Ch, 40V, 120A. Full specification with pinout and replacement list

G120N04 Specs and Replacement

Type Designator: G120N04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 970 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220 TO251 TO252

G120N04 substitution

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G120N04 datasheet

..1. Size:1306K goford
g120n04 to252 to251.pdf pdf_icon

GOFORD G120N04 Description The 120N04 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 120 40V 5.6 3.3 A High density cell design for ultra low Rdson Fully characterized... See More ⇒

..2. Size:2067K goford
g120n04 to220.pdf pdf_icon

GOFORD G120N04 Description The G120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID Schematic diagram @ (Typ) @10V (Typ) 4.5V 40V 5.5m 3.2m 120 A High density cell design for ultra low Rdson Fully characterized ava... See More ⇒

0.1. Size:2068K goford
g120n04a to220.pdf pdf_icon

GOFORD G120N04A Description The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID Schematic diagram @ (Typ) @10V (Typ) 4.5V 40V 5.5m 3.2m 120 A High density cell design for ultra low Rdson Fully characterized a... See More ⇒

0.2. Size:2068K goford
g120n04a.pdf pdf_icon