G120N04
MOSFET. Datasheet pdf. Equivalent
Type Designator: G120N04
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 130
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 75
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 970
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
TO220
TO251
TO252
G120N04
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G120N04
Datasheet (PDF)
..1. Size:1306K goford
g120n04 to252 to251.pdf 
GOFORDG120N04Description The 120N04 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 12040V 5.6 3.3 A High density cell design for ultra low Rdson Fully characterized
..2. Size:2067K goford
g120n04 to220.pdf
GOFORDG120N04Description The G120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized ava
0.1. Size:2068K goford
g120n04a to220.pdf
GOFORDG120N04ADescription The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized a
0.2. Size:2068K goford
g120n04a.pdf
GOFORDG120N04ADescription The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @ (Typ) @10V (Typ)4.5V 40V5.5m 3.2m 120A High density cell design for ultra low Rdson Fully characterized a
9.1. Size:246K ixys
mmix1g120n120a3v1.pdf
Advance Technical InformationGenX3TM 1200V VCES = 1200VMMIX1G120N120A3V1IGBT w/ DiodeIC110 = 105AVCE(sat) 2.2V(Electrically Isolated Tab)CUltra-Low-Vsat PT IGBT for3kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 V Isolated TabVGES Continuous 20 VCVGEM Tr
9.2. Size:62K ape
ap05g120nsw-hf.pdf
AP05G120NSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features VCES 1200V High Speed Switching IC 10.5A NPT Technology RoHS Compliant & Halogen-FreeGCTO-3PEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 VVGE Gate-Emitter Voltage +30 VIC@TC=25 Col
9.3. Size:433K winsemi
wgw15g120n.pdf
WGW15G120NWGW15G120NWGW15G120NWGW15G120NLow Loss IGBTLow Loss IGBTLow Loss IGBTLow Loss IGBTFeatures 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100CE(sat) C low Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMIPb-free lead plating; RoHS compliantApplications General purpose inverterFrequency convertersI
9.4. Size:692K cn wuxi unigroup
tsd120n10at tsp120n10at tsg120n10at.pdf
TSD120N10AT,TSP120N10AT,TSG120N10ATWuxi Unigroup Microelectronics CO.,LTD.100V N-Channel SGT MOSFETGeneral DescriptionProduct SummaryVDS 100V l Trench Power SGT technologyID (at VGS =10V) 55Al Very low on-resistance RDS(ON)RDS(ON) (at VGS =10V)
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