G1815 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

G1815 datasheet

..1. Size:1588K goford
g1815.pdf pdf_icon

GOFORD G1815 D Description The G1815 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) G1815 -18V 29m 36 m -5.8 A

0.1. Size:137K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. Size:234K foshan
3dg1815.pdf pdf_icon

2SC1815(3DG1815) NPN /SILICON NPN TRANSISTOR , Purpose Audio frequency general purpose ,driver stage amplifier applications. , , h , , 2SA1015(3CG1015) FE Features High voltage and high current, excellent h linearity ,low noise ,complementary FE p

0.3. Size:387K foshan
3dg1815m.pdf pdf_icon

2SC1815M(3DG1815M) NPN /SILICON NPN TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T

Otros transistores... G2503 , G100N03 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 , 4N60 , G1816 , G1825 , 15P03 , 16N10 , 18N10 , 2002A , 20P10 , 21N06 .