G1815 - описание и поиск аналогов

GOFORD G1815 D Description The G1815 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) G1815 -18V 29m 36 m -5.8 A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SC1815(3DG1815) NPN /SILICON NPN TRANSISTOR , Purpose Audio frequency general purpose ,driver stage amplifier applications. , , h , , 2SA1015(3CG1015) FE Features High voltage and high current, excellent h linearity ,low noise ,complementary FE p

2SC1815M(3DG1815M) NPN /SILICON NPN TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T