15P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 15P03
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET 15P03

15P03 Datasheet (PDF)

..1. Size:2013K goford
15p03.pdf

GOFORD15P03Description The 15P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m -15-30V 14 10 A High Power and cur

0.1. Size:2947K 1
hy15p03c2.pdf

HY15P03C2 Single P-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D D D D D D -30V/-60ARDS(ON)= 4.8m(typ.) @VGS =-10VRDS(ON)= 6.8m(typ.) @VGS =-4.5V Reliable and Rugged Halogen Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Powe

0.2. Size:1544K 1
ap15p03q.pdf

0.3. Size:299K rohm
rrr015p03.pdf

4V Drive Pch MOSFET RRR015P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT3Features(3)1) Low On-resistance.2) High power package.(1) (2)3) 4V drive.Abbreviated symbol : UJ ApplicationSwitching Inner circuit(3) Packaging specificationsPackage TapingTypeCode TL2Basic ordering unit (pieces) 3000(1)RRR015P03

0.4. Size:355K rohm
rrf015p03.pdf

4V Drive Pch MOSFET RRF015P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTUMT3Features1) Low On-resistance.2) High power package.3) 4V drive.Abbreviated symbol : UJ ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (pieces) 30002RRF015P03 (1)1 Absolut

0.5. Size:241K rohm
rsr015p03tl.pdf

0.6. Size:201K onsemi
nttfs015p03p8z.pdf

NTTFS015P03P8ZMOSFET Power, Single,P-Channel, m8FL-30 V, 7.5 mW Featureswww.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving andExcellent Thermal ConductionV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 mW @ -10 VCompliant-30 V -47.6 A12 mW @ -4.5 V

0.7. Size:2947K hymexa
hy15p03c2.pdf

0.8. Size:4735K hymexa
hy15p03s.pdf

HY15P03SP -Channel Enhancement Mode MOSFETFeatures Pin Description -30 / -15AVDD6.6mRDS(ON)= (typ.) @ VGS=-10VDD8.2mRDS(ON)= (typ.) @ VGS=-4.5VAvalanche Rated SSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)pplicationsA Power Management in DC/DC ConverterP-Channel MOSFETOrdering and Mark

0.9. Size:830K samwin
swk15p03 swh15p03.pdf

SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS : -30V SOP-8 DFN3*3 High ruggedness ID : -15A D Low RDS(ON) (Typ 14m)@VGS=-4.5V D D Low RDS(ON) (Typ 10m)@VGS=-10V RDS(ON) : 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App

0.10. Size:830K samwin
sw15p03 swk15p03 swh15p03.pdf