15P03 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:2013K goford
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GOFORD 15P03 Description The 15P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) m m -15 -30V 14 10 A High Power and cur

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HY15P03C2 Single P-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D -30V/-60A RDS(ON)= 4.8m (typ.) @VGS =-10V RDS(ON)= 6.8m (typ.) @VGS =-4.5V Reliable and Rugged Halogen Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Powe

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4V Drive Pch MOSFET RRF015P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) High power package. 3) 4V drive. Abbreviated symbol UJ Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 2 RRF015P03 (1) 1 Absolut

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NTTFS015P03P8Z MOSFET Power, Single, P-Channel, m8FL -30 V, 7.5 mW Features www.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.5 mW @ -10 V Compliant -30 V -47.6 A 12 mW @ -4.5 V

0.7. Size:2947K hymexa
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HY15P03C2 Single P-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D -30V/-60A RDS(ON)= 4.8m (typ.) @VGS =-10V RDS(ON)= 6.8m (typ.) @VGS =-4.5V Reliable and Rugged Halogen Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Powe

0.8. Size:4735K hymexa
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HY15P03S P -Channel Enhancement Mode MOSFET Features Pin Description -30 / -15A V D D 6.6m RDS(ON)= (typ.) @ VGS=-10V D D 8.2m RDS(ON)= (typ.) @ VGS=-4.5V Avalanche Rated S S S Reliable and Rugged G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) pplications A Power Management in DC/DC Converter P-Channel MOSFET Ordering and Mark

0.9. Size:830K samwin
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SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS -30V SOP-8 DFN3*3 High ruggedness ID -15A D Low RDS(ON) (Typ 14m )@VGS=-4.5V D D Low RDS(ON) (Typ 10m )@VGS=-10V RDS(ON) 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App

0.10. Size:830K samwin
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SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS -30V SOP-8 DFN3*3 High ruggedness ID -15A D Low RDS(ON) (Typ 14m )@VGS=-4.5V D D Low RDS(ON) (Typ 10m )@VGS=-10V RDS(ON) 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App

0.11. Size:1544K allpower
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