15P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORD15P03Description The 15P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m -15-30V 14 10 A High Power and cur

HY15P03C2 Single P-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D D D D D D -30V/-60ARDS(ON)= 4.8m(typ.) @VGS =-10VRDS(ON)= 6.8m(typ.) @VGS =-4.5V Reliable and Rugged Halogen Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Powe

4V Drive Pch MOSFET RRR015P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT3Features(3)1) Low On-resistance.2) High power package.(1) (2)3) 4V drive.Abbreviated symbol : UJ ApplicationSwitching Inner circuit(3) Packaging specificationsPackage TapingTypeCode TL2Basic ordering unit (pieces) 3000(1)RRR015P03

4V Drive Pch MOSFET RRF015P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTUMT3Features1) Low On-resistance.2) High power package.3) 4V drive.Abbreviated symbol : UJ ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (pieces) 30002RRF015P03 (1)1 Absolut

NTTFS015P03P8ZMOSFET Power, Single,P-Channel, m8FL-30 V, 7.5 mW Featureswww.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving andExcellent Thermal ConductionV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 mW @ -10 VCompliant-30 V -47.6 A12 mW @ -4.5 V

HY15P03C2 Single P-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D D D D D D -30V/-60ARDS(ON)= 4.8m(typ.) @VGS =-10VRDS(ON)= 6.8m(typ.) @VGS =-4.5V Reliable and Rugged Halogen Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Powe

HY15P03SP -Channel Enhancement Mode MOSFETFeatures Pin Description -30 / -15AVDD6.6mRDS(ON)= (typ.) @ VGS=-10VDD8.2mRDS(ON)= (typ.) @ VGS=-4.5VAvalanche Rated SSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)pplicationsA Power Management in DC/DC ConverterP-Channel MOSFETOrdering and Mark

SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS : -30V SOP-8 DFN3*3 High ruggedness ID : -15A D Low RDS(ON) (Typ 14m)@VGS=-4.5V D D Low RDS(ON) (Typ 10m)@VGS=-10V RDS(ON) : 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App

SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS : -30V SOP-8 DFN3*3 High ruggedness ID : -15A D Low RDS(ON) (Typ 14m)@VGS=-4.5V D D Low RDS(ON) (Typ 10m)@VGS=-10V RDS(ON) : 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App