25P06 Todos los transistores

 ..1. Size:1738K  goford
 25p06.pdf

GOFORD 25P06 Description The 25P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDSS RDS(ON) ID Schematic diagram @ -4.5V (typ) -60V m -25A 39 High density cell design for ultra low Rdson Fully characterized avalanche voltage an

 0.1. Size:829K  1
 hm25p06d.pdf

HM25P06D P-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 0.2. Size:67K  onsemi
 ntb25p06-d.pdf

NTB25P06 Power MOSFET -60 V, -27.5 A, P-Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http //onsemi.com Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Typical Applications PWM Motor Controls -60 V 65 mW @ -10 V -27.5 A Power Supplies Converters P-Ch

 0.3. Size:129K  onsemi
 ntb25p06 nvb25p06.pdf

 0.4. Size:125K  onsemi
 ntb25p06g nvb25p06.pdf

 0.5. Size:150K  utc
 utt25p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT25P06 Preliminary Power MOSFET -60V, -27.5A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P06 is suitable for power sup

 0.6. Size:339K  cystek
 mtb25p06fp.pdf

Spec. No. C584FP Issued Date 2014.07.03 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB25P06FP ID -52A RDS(ON)@VGS=-10V, ID=-20A 18.8m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 21.8m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circu

 0.7. Size:590K  way-on
 wmq25p06ts.pdf

WMQ25P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMQ25P06TS uses advanced power trench technology that has been D D D D D D D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G ss s ss G s Features PDFN3030-8L V = -60V, I = -25A DS D R

 0.8. Size:610K  way-on
 wmo25p06t1.pdf

WMO25P06T1 60V P-Channel Enhancement Mode Power MOSFET Description WMO25P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -60V, I = -25A DS D TO-252 R

 0.9. Size:675K  allpower
 ap25p06q.pdf

 0.10. Size:2097K  allpower
 ap25p06k.pdf

 0.11. Size:1447K  cn vbsemi
 ntb25p06t4g.pdf

NTB25P06T4G www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Lo

 0.12. Size:883K  cn vbsemi
 hm25p06k.pdf

HM25P06K www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Con

 0.13. Size:829K  cn hmsemi
 hm25p06d.pdf

HM25P06D P-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 0.14. Size:1028K  cn hmsemi
 hm25p06k.pdf

HM25P06K P-Channel Enhancement Mode Power MOSFET Description The HM25P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)