All MOSFET. 25P06 Datasheet

 

25P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 25P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 391 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: TO220

25P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

25P06 Datasheet (PDF)

1.1. nvb25p06.pdf Size:125K _update_mosfet

25P06
25P06

NTB25P06, NVB25P06 Power MOSFET -60 V, -27.5 A, P-Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http://onsemi.com • AEC Q101 Qualified - NVB25P06 • These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID MAX Typical Applications -60 V 65 mW @ -10 V -27.5 A

1.2. ntb25p06-d.pdf Size:67K _onsemi

25P06
25P06

NTB25P06 Power MOSFET -60 V, -27.5 A, P-Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http://onsemi.com Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Typical Applications PWM Motor Controls -60 V 65 mW @ -10 V -27.5 A Power Supplies Converters P-Channel Br

 1.3. utt25p06.pdf Size:150K _utc

25P06
25P06

UNISONIC TECHNOLOGIES CO., LTD UTT25P06 Preliminary Power MOSFET -60V, -27.5A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P06 is suitable for power suppli

1.4. mtb25p06fp.pdf Size:339K _cystek

25P06
25P06

Spec. No. : C584FP Issued Date : 2014.07.03 CYStech Electronics Corp. Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB25P06FP ID -52A RDS(ON)@VGS=-10V, ID=-20A 18.8mΩ(typ) RDS(ON)@VGS=-4.5V, ID=-20A 21.8mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circu

 1.5. 25p06.pdf Size:1738K _goford

25P06
25P06

GOFORD 25P06 Description The 25P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDSS RDS(ON) ID Schematic diagram @ -4.5V (typ) -60V m -25A 39 Ω ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage an

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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