28N10 Todos los transistores

 ..1. Size:1747K  goford
 28n10.pdf

GOFORD 28N10 Description The 28N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 28A 100V 24m Special process technology for high ESD capability High density cell design for ultra low Rdson Fully

 0.1. Size:248K  renesas
 np28n10sde.pdf

Preliminary Data Sheet R07DS0507EJ0100 NP28N10SDE Rev.1.00 Sep 16, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 m MAX. (VGS = 4.5 V, ID = 14 A) Low Ciss Ciss = 2200

 0.2. Size:478K  cystek
 mtb028n10qncq8.pdf

Spec. No. C168Q8 Issued Date 2016.11.18 CYStech Electronics Corp. Revised Date 2016.11.22 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 BVDSS 100V ID @ TA=25 C, VGS=10V 6.6A RDS(ON)@VGS=10V, ID=4A 19.3 m (typ) Features RDS(ON)@VGS=4.5V, ID=3A 27.0m (typ) Single Drive Requirement Low On-resistance Fast Switching Characterist

 0.3. Size:1192K  cn wxdh
 dsg030n10n3 dse028n10n3.pdf

DSG030N10N3/DSE028N10N3 170A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 100V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 2.6m TO-220 DS(on) (TYP) the RoHS standard. G R = 2.4m TO-263 DS(on) (TYP) 1 2 Features 3

 0.4. Size:947K  cn wxdh
 dse026n10na dsg028n10na.pdf

DSE026N10NA&DSG028N10NA 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided R = 2.4m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 2.2m T0-263 DS(on) (TYP) 1 3 S I = 180A D 2

 0.5. Size:995K  belling
 blp028n10-b blp028n10-p.pdf

BLP028N10 MOSFET Step-Down Converter 1 Description , BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 0.6. Size:23K  shaanxi
 wvm28n10.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM28N10(IRF140) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power s

 0.7. Size:649K  way-on
 wmb128n10t2.pdf

WMB128N10T2 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMB128N10T2 uses advanced power trench technology that has DD D D D been especially tailored to minimize the on-state resistance and G yet maintain superior switching performance. ss s ss G s Features PDFN5060-8L V = 100 V, I = 128A DS D R

 0.8. Size:708K  way-on
 wmm028n10hgs.pdf

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 257A

 0.9. Size:678K  way-on
 wmm028n10hg2.pdf

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast switching applications. S TO-263 Features V =100V, I = 245

 0.10. Size:618K  way-on
 wmk028n10hgs.pdf

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 257A

 0.11. Size:607K  way-on
 wmk028n10hg2.pdf

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V =100V, I = 2

 0.12. Size:598K  way-on
 wmj028n10hgs.pdf

WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-247 V = 100V, I = 228A

 0.13. Size:1195K  allpower
 apg028n10.pdf

 0.14. Size:1334K  cn scilicon
 sfp028n100c3 sfb025n100c3.pdf

SFP028N100C3,SFB025N100C3 N-MOSFET 100V, 2.4m , 120A Features Product Summary Enhancement Mode VDS 100V Very Low On-Resistance RDS(on) typ. 2.4m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive DC/DC Converter General Purpose Applications D G S SFP028N100C3 SFB025N100C3 Package Marking and Orde

 0.15. Size:859K  cn minos
 mpt028n10p mpt028n10s.pdf

100V N-Channel Power MOSFET Description MPT028N10,the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. General Features V =100V, R