GOFORD28N10Description The 28N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @10V (typ) 28A100V 24m Special process technology for high ESD capability High density cell design for ultra low Rdson Fully

Preliminary Data Sheet R07DS0507EJ0100NP28N10SDE Rev.1.00Sep 16, 2011MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 m MAX. (VGS = 4.5 V, ID = 14 A) Low Ciss: Ciss = 2200

Spec. No. : C168Q8 Issued Date : 2016.11.18 CYStech Electronics Corp. Revised Date : 2016.11.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 BVDSS 100VID @ TA=25C, VGS=10V 6.6A RDS(ON)@VGS=10V, ID=4A 19.3 m(typ)Features RDS(ON)@VGS=4.5V, ID=3A 27.0m(typ) Single Drive Requirement Low On-resistance Fast Switching Characterist

DSG030N10N3/DSE028N10N3170A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 100VDSSadvanced splite gate trench technology design, provided2 Dexcellent Rdson and low gate charge. Which accords withR = 2.6mTO-220DS(on) (TYP)the RoHS standard.GR = 2.4mTO-263DS(on) (TYP)12 Features 3

DSE026N10NA&DSG028N10NA180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedR = 2.4mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 2.2mT0-263DS(on) (TYP)13 SI = 180AD2

BLP028N10 MOSFET Step-Down Converter 1Description , BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM28N10(IRF140)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

WMB128N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB128N10T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 128A DS DR

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 257A

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V =100V, I = 245

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2

WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 100V, I = 228A

SFP028N100C3,SFB025N100C3N-MOSFET 100V, 2.4m, 120AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.4m Fast SwitchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFP028N100C3 SFB025N100C3Package Marking and Orde