3401L Todos los transistores

GOFORD 3401L Description D The 3401L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ) m m m 50 -4.2

DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = 25 C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (Note 3) 85m @ VGS =

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance. 3 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. 1 FEATURES 2 2)RDS(ON)

Product specification DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = 25 C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (

JSM3401L P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.053 @-10V 3 -30V 0.065 @-4.5V 1.GATE -4.2A 2.SOURCE 0.085 @-2.5V 3.DRAIN 1 2 MARKING Equivalent Circuit General FEATURE TrenchFET Power MOSFET Lead free product is acquired Surface mount package A19TF w APPLICATION *w week code Load Switch for Portable Devices DC/DC Converter Maximu