3401L MOSFET. Datasheet pdf. Equivalent
Type Designator: 3401L
Marking Code: 3401Y
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 4.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.5 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23-3L
3401L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3401L Datasheet (PDF)
3401l.pdf
GOFORD3401LDescription DThe 3401L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)mm m 50 -4.2
dmg3401lsn.pdf
DMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (Note 3) 85m @ VGS =
lp3401lt1g.pdf
LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3401LT1GAPPLICATIONS1)Advanced trench process technology2)High Density Cell Design For Ultra Low On-Resistance.33)We declare that the material of product compliant with RoHS requirements and Halogen Free.1FEATURES 22)RDS(ON)
dmg3401lsn.pdf
Product specificationDMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (
jsm3401l.pdf
JSM3401LP-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-3L0.053@-10V3-30V 0.065@-4.5V 1.GATE-4.2A2.SOURCE0.085@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA19TF wAPPLICATION*wweek codeLoad Switch for Portable DevicesDC/DC ConverterMaximu
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