80N04 Datasheet. Equivalente

 ..1. Size:1491K  goford
 80n04.pdf

GOFORD 80N04 Description The OGFD80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It VDS RDS(ON) ID can be used in a wide variety of applications.

 0.1. Size:570K  1
 ap80n04q.pdf

 0.2. Size:869K  1
 mcac80n045y-tp.pdf

MCAC80N045Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 45 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA VDS=32V, VGS=0V, TJ=25 C 1 IDSS Zero Gate Voltage Drain Current A VDS=32V, VGS=0V, TJ=85 C 30 VGS(t

 0.3. Size:1965K  1
 ap80n04g.pdf

 0.4. Size:212K  renesas
 np180n04tuj.pdf

Preliminary Data Sheet R07DS0180EJ0100 NP180N04TUJ Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 1.5 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut

 0.5. Size:305K  renesas
 np180n04tug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.6. Size:292K  renesas
 np80n04che np80n04dhe np80n04ehe np80n04khe np80n04mhe np80n04nhe.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.7. Size:349K  renesas
 np80n04mdg np80n04ndg np80n04pdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.8. Size:338K  renesas
 np80n04nug np80n04pug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.9. Size:245K  renesas
 np180n04tuk.pdf

Preliminary Data Sheet R07DS0542EJ0100 NP180N04TUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) Designed

 0.10. Size:348K  renesas
 np80n04mlg np80n04nlg np80n04plg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.11. Size:351K  infineon
 ipb180n04s4-00.pdf

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim

 0.12. Size:160K  infineon
 ipb80n04s4-04 ipi80n04s4-04 ipp80n04s4-04 ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

 0.13. Size:153K  infineon
 ipp80n04s2l-03 ipb80n04s2l-03.pdf

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 0.14. Size:187K  infineon
 ipb80n04s3-04 ipi80n04s3-04 ipp80n04s3-04 ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf

IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche

 0.15. Size:188K  infineon
 ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipp80n04s3 b80n04s3 i80n04s3-03.pdf

IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.2 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on

 0.16. Size:665K  infineon
 iauc80n04s6l032.pdf

IAUC80N04S6L032 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 3.2 mW ID 80 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested

 0.17. Size:159K  infineon
 ipb80n04s4l-04 ipi80n04s4l-04 ipp80n04s4l-04 ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf

IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ

 0.18. Size:159K  infineon
 ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 0.19. Size:158K  infineon
 ipb80n04s4-03 ipi80n04s4-03 ipp80n04s4-03 ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf

IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

 0.20. Size:162K  infineon
 ipb180n04s4-00 ds 1 0.pdf

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N040

 0.21. Size:184K  infineon
 ipd80n04s3-06 ipd80n04s3-06 ds 1 0.pdf

IPD80N04S3-06 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 5.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD80N04S3-06 PG-TO252-3-11 QN0406 Max

 0.22. Size:190K  infineon
 ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre

 0.23. Size:162K  infineon
 ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf

IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.1 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0

 0.24. Size:665K  infineon
 iauc80n04s6n036.pdf

IAUC80N04S6N036 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 3.6 mW ID 80 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested

 0.25. Size:213K  infineon
 ipb180n04s4l-01.pdf

Data Sheet IPB180N04S4L-01 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.2 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-01 PG-TO263-7-3 4N04L01 Ma

 0.26. Size:207K  infineon
 iaus180n04s4n015.pdf

IAUS180N04S4N015 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.5 m ID 180 A Features PG-HSOG-8-1 N-channel - Enhancement mode Tab AEC qualified MSL1 up to 260 C peak reflow 8 1 Tab 175 C operating temperature Green product (RoHS compliant) 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking IAUS180N04S4N015 P

 0.27. Size:188K  infineon
 ipb80n04s3-06 ipi80n04s3-06 ipp80n04s3-06 ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf

IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche t

 0.28. Size:671K  infineon
 iaua180n04s5n012.pdf

IAUA180N04S5N012 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.2 mW ID 180 A Features PG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260 C peak reflow 1 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested 1

 0.29. Size:169K  infineon
 ipb80n04s3-h4 ipi80n04s3-h4 ipp80n04s3-h4.pdf

IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 4.5 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche

 0.30. Size:213K  infineon
 ipb180n04s4l-h0.pdf

Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.0 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-H0 PG-TO263-7-3 4N04LH0 Ma

 0.31. Size:183K  infineon
 ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf

IPB180N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 1.5 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Marking Package IPB180N04S3-02 PG-

 0.32. Size:162K  infineon
 ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf

IPB180N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.3 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-01 PG-TO263-7-3 4N0401

 0.33. Size:169K  infineon
 ipp80n04s3-h4.pdf

IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 4.5 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche

 0.34. Size:869K  mcc
 mcac80n045y.pdf

MCAC80N045Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 45 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA VDS=32V, VGS=0V, TJ=25 C 1 IDSS Zero Gate Voltage Drain Current A VDS=32V, VGS=0V, TJ=85 C 30 VGS(t

 0.35. Size:1268K  blue-rocket-elect
 brcs080n04sc.pdf

BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V 8mR(Typ.6.4mR) HF Product. / Applications

 0.36. Size:1705K  blue-rocket-elect
 brcs080n04sdp.pdf

BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DS I =54A (V = 20V) D GS R DS(ON)@10V 8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite

 0.37. Size:1369K  blue-rocket-elect
 brcs080n04zc.pdf

BRCS080N04ZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 5 6 N N-Channel MOSFET in a PDFN 5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;

 0.38. Size:2391K  blue-rocket-elect
 brcs080n04yb.pdf

 0.39. Size:1194K  blue-rocket-elect
 brcs080n04zb.pdf

BRCS080N04ZB Rev.A May.-2022 DATA SHEET / Descriptions DFN3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN3 3A-8L Plastic Package. / Features VDS (V) = 40V ID = 40A (VGS = 20V) HF Product. / Applications DC/DC

 0.40. Size:658K  samwin
 swi80n04v swd80n04v.pdf

SW80N04V N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS 40V TO-251 TO-252 ID 80A High ruggedness Low RDS(ON) Typ 7.2m @VGS=4.5V RDS(ON) 7.2m @VGS=4.5V Typ 6.0m @VGS=10V 6.0m @VGS=10V Low Gate Charge (Typ 49nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 Application LED, Charger, Ada

 0.41. Size:647K  way-on
 wmk80n04t1.pdf

WMK80N04T1 40V N-Channel Enhancement Mode Power MOSFET Description WMK80NN04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V = 40V, I = 80A DS D TO-220 R

 0.42. Size:570K  allpower
 ap80n04q.pdf

 0.43. Size:1965K  allpower
 ap80n04g.pdf

 0.44. Size:568K  jiejie micro
 jmtg080n04d.pdf

JMTG080N04D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 40V, 45A Load Switch RDS(ON)

 0.45. Size:923K  jiejie micro
 jmtp080n04a.pdf

JMTP080N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 15A Load Switch RDS(ON)

 0.46. Size:794K  jiejie micro
 jmtp080n04d.pdf

JMTP080N04D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 40V, 13A Load Switch RDS(ON)

 0.47. Size:657K  winsok
 wsk180n04.pdf

WSK180N04 N-Ch MOSFET General Description Product Summery The WSK180N04 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 40V 3.0m 180A and gate charge for most of the synchronous buck converter applications . Applications The WSK180N04 meet the RoHS and Switching application Green Product requ

 0.48. Size:1636K  cn vbsemi
 vbzl80n04.pdf

VBZL80N04 www.VBsemi.com N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET 40 VDS V Maximum 175 C junction temperature 5 RDS(on) VGS = 10 V m 100 % Rg and UIS tested 6 RDS(on) VGS = 4.5 V m Material categorization 110 ID A for definitions of compliance please see Configuration Single D TO-263 G S S S D D G

 0.49. Size:914K  cn vbsemi
 vbzm80n04.pdf

VBZM80N04 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 40 V 100 % Rg and UIS Tested 6 RDS(on) VGS = 10 V m RoHS ID 110 A APPLICATIONS COMPLIANT Configuration Single Synchronous Rectification Power Supplies TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless

 0.50. Size:713K  cn hmsemi
 hm80n04.pdf

HM80N04 N-Channel Enhancement Mode Power MOSFET Description The HM80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 0.51. Size:750K  cn hmsemi
 hm80n04k.pdf

HM80N04K N-Channel Enhancement Mode Power MOSFET Description The HM80N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 0.52. Size:292K  inchange semiconductor
 ipd80n04s3-06.pdf

isc N-Channel MOSFET Transistor IPD80N04S3-06 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R 5.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAX

 0.53. Size:339K  inchange semiconductor
 ipb80n04s2-04.pdf

isc N-Channel MOSFET Transistor IPB80N04S2-04 FEATURES Drain Current I 80A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC conve

 0.54. Size:1493K  cn apm
 ap180n04nf.pdf

AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS D R

 0.55. Size:1472K  cn apm
 apg180n04nf.pdf

APG180N04NF 40V N-Channel Enhancement Mode MOSFET Description The APG180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS D R

 0.56. Size:1407K  cn apm
 ap80n04df.pdf

AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R

 0.57. Size:1651K  cn apm
 ap80n04d.pdf

AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R