All MOSFET. 80N04 Datasheet

 

80N04 MOSFET. Datasheet pdf. Equivalent

Type Designator: 80N04

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 750 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO252

80N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

80N04 Datasheet (PDF)

1.1. ipb180n04s4-00 ds 1 0.pdf Size:162K _infineon

80N04
80N04

IPB180N04S4-00 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 0.98 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maximum ratings, at

1.2. ipp80n04s2l-03 ipb80n04s2l-03 green.pdf Size:153K _infineon

80N04
80N04

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package

1.3. ipb180n04s4-h0 ds 1 0.pdf Size:162K _infineon

80N04
80N04

IPB180N04S4-H0 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 1.1 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0 Maximum ratings, at

1.4. ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf Size:190K _infineon

80N04
80N04

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS® Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compl

1.5. ipb180n04s4-01 ds 1 0.pdf Size:162K _infineon

80N04
80N04

IPB180N04S4-01 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 1.3 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N04S4-01 PG-TO263-7-3 4N0401 Maximum ratings, at

1.6. ipb180n04s3-02 ds 1 0.pdf Size:183K _infineon

80N04
80N04

IPB180N04S3-02 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 1.5 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Marking Package IPB180N04S3-02 PG-TO263-7-3 3QN0402 Max

1.7. ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf Size:188K _infineon

80N04
80N04

IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package

1.8. ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf Size:159K _infineon

80N04
80N04

IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking I

1.9. ipp80n04s3-h4.pdf Size:169K _infineon

80N04
80N04

IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 4.5 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package

1.10. ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04 green.pdf Size:159K _infineon

80N04
80N04

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel - Enhancement mode R (SMD version) 3.4 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested

1.11. ipd80n04s3-06 ds 1 0.pdf Size:184K _infineon

80N04
80N04

IPD80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 5.2 m? DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD80N04S3-06 PG-TO252-3-11 QN0406 Maximum ratings, at T =

1.12. ipp80n04s3 b80n04s3 i80n04s3-03.pdf Size:188K _infineon

80N04
80N04

IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.2 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche

1.13. ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf Size:187K _infineon

80N04
80N04

IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package

1.14. ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf Size:158K _infineon

80N04
80N04

IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB8

1.15. ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf Size:160K _infineon

80N04
80N04

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB8

1.16. 80n04.pdf Size:1491K _goford

80N04
80N04

GOFORD 80N04 Description The OGFD80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It VDS RDS(ON) ID can be used in a wide variety of applications. <7mΩ 40V 80A General Features ● VDSS RDS(ON) ID @ 10V (typ) mΩ 80A 40V 5.4 ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage

Datasheet: 40P04 , 45P40 , 50N03 , 5P40 , 60N04 , 6706A , 68P40 , 80N03 , IRF8010 , 80N08TR , 8205A , 8205B , G3205 , G1010 , G3710 , 5N20A , 630A .

 


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