IRF5210 Todos los transistores

 

IRF5210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5210

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 200 W

Voltaje máximo drenador - fuente |Vds|: 100 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 40 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Carga de la puerta (Qg): 180(max) nC

Tiempo de subida (tr): 86 nS

Conductancia de drenaje-sustrato (Cd): 790 pF

Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm

Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRF5210

 

IRF5210 Datasheet (PDF)

 ..1. Size:125K  international rectifier
irf5210.pdf

IRF5210
IRF5210

PD - 91434AIRF5210HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

 ..2. Size:189K  international rectifier
irf5210pbf.pdf

IRF5210
IRF5210

PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 ..3. Size:189K  infineon
irf5210pbf.pdf

IRF5210
IRF5210

PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 ..4. Size:279K  inchange semiconductor
irf5210.pdf

IRF5210
IRF5210

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210,IIRF5210FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extreme

 0.1. Size:310K  international rectifier
irf5210lpbf irf5210spbf.pdf

IRF5210
IRF5210

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

 0.2. Size:236K  international rectifier
auirf5210s.pdf

IRF5210
IRF5210

AUTOMOTIVE GRADEAUIRF5210SFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-100Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.60mGl 175C Operating TemperatureS ID-38Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxDl Lead-Free, RoHS Compliantl Automotive Qualified *Desc

 0.3. Size:186K  international rectifier
irf5210s.pdf

IRF5210
IRF5210

PD - 91405CIRF5210S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5210S)VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

 0.4. Size:295K  infineon
auirf5210s.pdf

IRF5210
IRF5210

AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifical

 0.5. Size:310K  infineon
irf5210spbf irf5210lpbf.pdf

IRF5210
IRF5210

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

 0.6. Size:206K  inchange semiconductor
irf5210spbf.pdf

IRF5210
IRF5210

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210SPBFFEATURESP-channelWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingUltra low on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF740 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S .

 

 
Back to Top

 


IRF5210
  IRF5210
  IRF5210
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: WMU080N10HG2 | WMT07N10TS | WMT07N06TS | WMT07N03T1 | WMT05N12TS | WMT05N10T1 | WMT04P10TS | WMT04P06TS | WMT04N10TS | WMS690N15HG2 | WMS240N10LG2 | WMS17P03TS | WMS175N10LG4 | WMS175N10HG4 | WMS175DN10LG4 | WMS15P02T1

 

 

 
Back to Top