Справочник MOSFET. IRF5210

 

IRF5210 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF5210

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 200 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 40 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 180(max) nC

Время нарастания (tr): 86 ns

Выходная емкость (Cd): 790 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRF5210

 

 

IRF5210 Datasheet (PDF)

..1. irf5210.pdf Size:125K _international_rectifier

IRF5210
IRF5210

PD - 91434AIRF5210HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

..2. irf5210.pdf Size:279K _inchange_semiconductor

IRF5210
IRF5210

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210,IIRF5210FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extreme

0.1. irf5210lpbf irf5210spbf.pdf Size:310K _international_rectifier

IRF5210
IRF5210

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

0.2. auirf5210s.pdf Size:236K _international_rectifier

IRF5210
IRF5210

AUTOMOTIVE GRADEAUIRF5210SFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-100Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.60mGl 175C Operating TemperatureS ID-38Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxDl Lead-Free, RoHS Compliantl Automotive Qualified *Desc

 

 0.3. irf5210pbf.pdf Size:189K _international_rectifier

IRF5210
IRF5210

PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

0.4. irf5210s.pdf Size:186K _international_rectifier

IRF5210
IRF5210

PD - 91405CIRF5210S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5210S)VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

 0.5. auirf5210s.pdf Size:295K _infineon

IRF5210
IRF5210

AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifical

0.6. irf5210pbf.pdf Size:189K _infineon

IRF5210
IRF5210

PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

0.7. irf5210spbf irf5210lpbf.pdf Size:310K _infineon

IRF5210
IRF5210

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

0.8. irf5210spbf.pdf Size:206K _inchange_semiconductor

IRF5210
IRF5210

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210SPBFFEATURESP-channelWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingUltra low on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Другие MOSFET... IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , WSP4886 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S .

 

 
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