6N70F Todos los transistores

 ..1. Size:1126K  goford
 6n70 6n70f.pdf

6N70/6N70F GOFORD Description Features VDSS RDS(ON) ID @ 10V (typ) 6 A 700V 1.2 Fast switching 100% avalanche tested Improved dv/dt capability Application High frequency switching mode power supply Uninterruptible Power Supply (UPS) Electronic ballast Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-22

 0.1. Size:381K  kec
 kf6n70f.pdf

KF6N70F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power supplie

 0.2. Size:1070K  jilin sino
 jcs6n70f.pdf

N R N-CHANNEL MOSFET JCS6N70C Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR

 0.3. Size:1533K  jilin sino
 jcs6n70v jcs6n70mp jcs6n70b jcs6n70s jcs6n70c jcs6n70f jcs6n70b jcs6n70r.pdf

N R N-CHANNEL MOSFET JCS6N70C Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR

 0.4. Size:274K  cystek
 mtn6n70fp.pdf

Spec. No. C597FP Issued Date 2010.01.28 CYStech Electronics Corp. Revised Date 2011.10.24 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 700V RDS(ON) 1.23 (typ.) MTN6N70FP ID 6A Description The MTN6N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 0.5. Size:361K  crhj
 cs6n70f b9d.pdf

Silicon N-Channel Power MOSFET R CS6N70F B9D General Description VDSS 700 V CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.4 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.6. Size:708K  crhj
 cs6n70f a9h.pdf

Silicon N-Channel Power MOSFET R CS6N70F A9H General Description VDSS 700 V CS6N70F A9H,the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.7. Size:233K  crhj
 cs6n70f a9d.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS6N70F A9D General Description VDSS 700 V CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can

 0.8. Size:4290K  kexin
 kx6n70f.pdf

DIP Type MOSFET N-Channel Enhancement MOSFET KX6N70F Unit mm TO-220F 0.20 0.20 0.20 2.54 Features 0.20 0.70 VDS (V) = 700V ID = 6.0A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC) 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 2.54typ 2.54typ Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 0.9. Size:316K  silan
 svf6n70f.pdf

 0.10. Size:361K  wuxi china
 cs6n70fb9d.pdf

Silicon N-Channel Power MOSFET R CS6N70F B9D General Description VDSS 700 V CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.4 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.11. Size:348K  wuxi china
 cs6n70fa9d.pdf

Silicon N-Channel Power MOSFET R CS6N70F A9D General Description VDSS 700 V CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.35 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.12. Size:494K  convert
 cs6n70f cs6n70k cs6n70u cs6n70d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS6N70F,CS6N70K,CS6N70U,CS6N70D 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS6N70F TO-220F

 0.13. Size:713K  convert
 csfr6n70f csfr6n70k csfr6n70u csfr6n70d.pdf

CSFR6N70F,CSFR6N70K nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR6N70U,CSFR6N70D 700V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package In

 0.14. Size:2240K  first semi
 fir6n70fg.pdf

FIR6N70FG N - Ch a n n el P o w e r M O S F ET-E GENERAL DESCRIPTION PIN Connection TO-220F is an N-channel enhancement mode power MOS field FIR6N70FG effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, pr

 0.15. Size:1027K  cn hmsemi
 hm6n70 hm6n70f.pdf

HM6N70/F General Description VDSS 700 V HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

 0.16. Size:409K  cn haohai electr
 h6n70p h6n70f.pdf

6N70 Series N-Channel MOSFET 6A, 700V, N H FQP6N70C H6N70P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 6N70 FQPF6N70C H6N70F F TO-220FP 6N70 Series Pin Assignment Features ID=6A Originative New Design BVD