6N70F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 6N70F
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 27.3 ns
Выходная емкость (Cd): 98.2 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO220F
6N70F Datasheet (PDF)
6n70 6n70f.pdf
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6N70/6N70FGOFORDDescription Features VDSS RDS(ON) ID @10V (typ) 6 A700V 1.2 Fast switching 100% avalanche tested Improved dv/dt capability Application High frequency switching mode power supply Uninterruptible Power Supply (UPS) Electronic ballast Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-22
kf6n70f.pdf
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KF6N70FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power supplie
jcs6n70f.pdf
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N RN-CHANNEL MOSFET JCS6N70C Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR
jcs6n70v jcs6n70mp jcs6n70b jcs6n70s jcs6n70c jcs6n70f jcs6n70b jcs6n70r.pdf
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N RN-CHANNEL MOSFET JCS6N70C Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR
mtn6n70fp.pdf
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Spec. No. : C597FP Issued Date : 2010.01.28 CYStech Electronics Corp.Revised Date :2011.10.24 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V RDS(ON) : 1.23 (typ.) MTN6N70FP ID : 6A Description The MTN6N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
cs6n70f b9d.pdf
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Silicon N-Channel Power MOSFET R CS6N70F B9D General Description VDSS 700 V CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.4 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs6n70f a9h.pdf
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Silicon N-Channel Power MOSFET R CS6N70F A9H General Description VDSS 700 V CS6N70F A9H,the silicon N-channel Enhanced ID 6 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs6n70f a9d.pdf
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Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS6N70F A9D General Description VDSS 700 V CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can
kx6n70f.pdf
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DIP Type MOSFETN-Channel Enhancement MOSFETKX6N70FUnit: mmTO-220F0.200.200.202.54 Features0.200.70 VDS (V) = 700V ID = 6.0A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC)0.202.761.47max0.200.500.200.802.54typ2.54typ Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
cs6n70fb9d.pdf
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Silicon N-Channel Power MOSFET R CS6N70F B9D General Description VDSS 700 V CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.4 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs6n70fa9d.pdf
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Silicon N-Channel Power MOSFET R CS6N70F A9D General Description VDSS 700 V CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.35 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs6n70f cs6n70k cs6n70u cs6n70d.pdf
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nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N70F,CS6N70K,CS6N70U,CS6N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N70F TO-220F
csfr6n70f csfr6n70k csfr6n70u csfr6n70d.pdf
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CSFR6N70F,CSFR6N70KnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR6N70U,CSFR6N70D700V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package In
hm6n70 hm6n70f.pdf
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HM6N70/F General Description VDSS 700 V HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a
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