18N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 18N50A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 173 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 53.3 nS
Conductancia de drenaje-sustrato (Cd): 264.6 pF
Resistencia entre drenaje y fuente RDS(on): 0.26 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET 18N50A
18N50A Datasheet (PDF)
18n50a.pdf
GOFORD18N50ADescription Features VDSS RDS(ON) ID @10V (typ) 18A500V 0.22 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units
ixzr18n50a ixzr18n50b.pdf
IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 500 V PDC = 350 W TJ = 25C to 150C; RGS
jcs18n50we jcs18n50abe.pdf
N N- CHANNEL MOSFET RJCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
fhf18n50a.pdf
N N-CHANNEL MOSFET FHF18N50A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.31 Fast switching Qg-typ 58nC 100% 100% avalanche tested dv/dt Improved dv/d
hm18n50a hm18n50f.pdf
HM18N50A / HM18N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 500V, RDS(on)typ. = 236m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 69nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
