18N50A Datasheet. Specs and Replacement
Type Designator: 18N50A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 173 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 53.3 nS
Cossⓘ - Output Capacitance: 264.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO220
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18N50A substitution
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18N50A datasheet
18n50a.pdf
GOFORD 18N50A Description Features VDSS RDS(ON) ID @ 10V (typ) 18A 500V 0.22 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units ... See More ⇒
ixzr18n50a ixzr18n50b.pdf
IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C VDSS 500 V PDC = 350 W TJ = 25 C to 150 C; RGS ... See More ⇒
jcs18n50we jcs18n50abe.pdf
N N- CHANNEL MOSFET R JCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
fhf18n50a.pdf
N N-CHANNEL MOSFET FHF18N50A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.31 Fast switching Qg-typ 58nC 100% 100% avalanche tested dv/dt Improved dv/d... See More ⇒
Detailed specifications: 8N60AF, 10N60F, 12N60F, 7N65AF, 10N65A, 10N65AF, 6N70F, 7N80F, IRFB4227, G4N65, G7N65, G8N80BF, G10N80BF, 12N65A, 12N65AF, SVD4N65T, SVD4N65F
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