FTK10N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTK10N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 15.5 nC
   trⓘ - Tiempo de subida: 7.4 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET FTK10N10

FTK10N10 Datasheet (PDF)

..1. Size:468K first silicon
ftk10n10.pdf

SEMICONDUCTORFTK10N10TECHNICAL DATAFTK10N10 N-Channel Power MOSFET AIGENERAL DESCRIPTION CJThe FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2FEATURE F 2 30 0 1

8.1. Size:283K first silicon
ftk10n65p f dd.pdf

SEMICONDUCTORFTK10N65P / F / DDTECHNICAL DATA10 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul

8.2. Size:339K first silicon
ftk10n60p f dd.pdf

SEMICONDUCTORFTK10N60P/F/DDTECHNICAL DATA10 Amps, 600 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse

9.1. Size:484K first silicon
ftk1090.pdf

SEMICONDUCTORFTK1090TECHNICAL DATAFeathers: ID =15A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=0.06 (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK1090 is a new generation of high voltage an

9.2. Size:488K first silicon
ftk1013.pdf

SEMICONDUCTOR FTK1013TECHNICAL DATAP-Channel 1.8-V (G-S) MOSFETFEATURESTrenchFET Power MOSFET: 1.8-V RatedGate-Source ESD Protected: 2000 VHigh-Side SwitchingLow On-Resistance: 1.2 SOT-523Low Threshold: 0.8 V (typ)Fast Switching Speed: 14 nsS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

9.3. Size:341K first silicon
ftk1016.pdf

SEMICONDUCTORFTK1016TECHNICAL DATAFeathers: ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m(Max. Fully characterized avalanche voltage and current Description: The FTK1016 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability

9.4. Size:293K first silicon
ftk100n10p.pdf

SEMICONDUCTORFTK100N10PTECHNICAL DATAN-Channel Power MOSFET (100V/100A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drai

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI4410DY

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