FTK10N10
MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK10N10
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15.5
nC
trⓘ - Rise Time: 7.4
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
DPAK
FTK10N10
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK10N10
Datasheet (PDF)
..1. Size:468K first silicon
ftk10n10.pdf 
SEMICONDUCTORFTK10N10TECHNICAL DATAFTK10N10 N-Channel Power MOSFET AIGENERAL DESCRIPTION CJThe FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2FEATURE F 2 30 0 1
8.1. Size:283K first silicon
ftk10n65p f dd.pdf
SEMICONDUCTORFTK10N65P / F / DDTECHNICAL DATA10 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul
8.2. Size:339K first silicon
ftk10n60p f dd.pdf
SEMICONDUCTORFTK10N60P/F/DDTECHNICAL DATA10 Amps, 600 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse
9.1. Size:484K first silicon
ftk1090.pdf
SEMICONDUCTORFTK1090TECHNICAL DATAFeathers: ID =15A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=0.06 (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK1090 is a new generation of high voltage an
9.2. Size:488K first silicon
ftk1013.pdf
SEMICONDUCTOR FTK1013TECHNICAL DATAP-Channel 1.8-V (G-S) MOSFETFEATURESTrenchFET Power MOSFET: 1.8-V RatedGate-Source ESD Protected: 2000 VHigh-Side SwitchingLow On-Resistance: 1.2 SOT-523Low Threshold: 0.8 V (typ)Fast Switching Speed: 14 nsS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
9.3. Size:341K first silicon
ftk1016.pdf
SEMICONDUCTORFTK1016TECHNICAL DATAFeathers: ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m(Max. Fully characterized avalanche voltage and current Description: The FTK1016 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability
9.4. Size:293K first silicon
ftk100n10p.pdf
SEMICONDUCTORFTK100N10PTECHNICAL DATAN-Channel Power MOSFET (100V/100A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drai
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