FTK840F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTK840F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 21 nS
Conductancia de drenaje-sustrato (Cd): 20 pF
Resistencia entre drenaje y fuente RDS(on): 0.85 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET FTK840F
FTK840F Datasheet (PDF)
ftk840 ftk840p f.pdf
SEMICONDUCTORFTK840P / FTECHNICAL DATAMOSFET8A, 500V, 0.85, N-CHANNELPOWER MOSFETP :1DESCRIPTIONTO-220 The N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.F :1TO-220FFEATURES* 8A, 500V, Low RDS(ON
ftk84.pdf
SEMICONDUCTORFTK84TECHNICAL DATAPOWER MOSFET130 mAmps, 50 VoltsPChannel SOT23These miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, load3switching, power management in portable and batterypoweredproducts such as computers, printers, ce
ftk84d.pdf
SEMICONDUCTORFTK84DTECHNICAL DATA130PChannel SC-88(SOT-363)These miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as computers, printers, cellular and cordless teleph
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
