FTK840F Datasheet and Replacement
Type Designator: FTK840F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220F
FTK840F substitution
FTK840F Datasheet (PDF)
ftk840 ftk840p f.pdf

SEMICONDUCTORFTK840P / FTECHNICAL DATAMOSFET8A, 500V, 0.85, N-CHANNELPOWER MOSFETP :1DESCRIPTIONTO-220 The N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.F :1TO-220FFEATURES* 8A, 500V, Low RDS(ON
ftk84.pdf

SEMICONDUCTORFTK84TECHNICAL DATAPOWER MOSFET130 mAmps, 50 VoltsPChannel SOT23These miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, load3switching, power management in portable and batterypoweredproducts such as computers, printers, ce
ftk84d.pdf

SEMICONDUCTORFTK84DTECHNICAL DATA130PChannel SC-88(SOT-363)These miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as computers, printers, cellular and cordless teleph
Datasheet: FTK80N10P , FTK8205A , FTK830P , FTK830F , FTK830I , FTK830D , FTK84 , FTK840P , RU7088R , FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P , FTK7N65P , FTK7N65F , FTK7N65DD , FTK75N75 .
History: AP9973GJ-HF | SFF440 | SIHF9530S | CEDM7004VL
Keywords - FTK840F MOSFET datasheet
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History: AP9973GJ-HF | SFF440 | SIHF9530S | CEDM7004VL



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