FTK10N65DD MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FTK10N65DD datasheet

6.1. Size:283K first silicon
ftk10n65p f dd.pdf pdf_icon

SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul

7.1. Size:339K first silicon
ftk10n60p f dd.pdf pdf_icon

SEMICONDUCTOR FTK10N60P/F/DD TECHNICAL DATA 10 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse

8.1. Size:468K first silicon
ftk10n10.pdf pdf_icon

SEMICONDUCTOR FTK10N10 TECHNICAL DATA FTK10N10 N-Channel Power MOSFET A I GENERAL DESCRIPTION C J The FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 FEATURE F 2 30 0 1

Otros transistores... FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P , FTK7N65P , FTK7N65F , FTK7N65DD , FTK75N75 , RU7088R , FTK10N65F , FTK10N65P , FTK123 , FTK630P , FTK630F , FTK7000 , FTK7002 , FTK7002D .