FTK10N65DD
MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK10N65DD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 156
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 9.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO263
FTK10N65DD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK10N65DD
Datasheet (PDF)
6.1. Size:283K first silicon
ftk10n65p f dd.pdf 
SEMICONDUCTORFTK10N65P / F / DDTECHNICAL DATA10 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul
7.1. Size:339K first silicon
ftk10n60p f dd.pdf
SEMICONDUCTORFTK10N60P/F/DDTECHNICAL DATA10 Amps, 600 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse
8.1. Size:468K first silicon
ftk10n10.pdf
SEMICONDUCTORFTK10N10TECHNICAL DATAFTK10N10 N-Channel Power MOSFET AIGENERAL DESCRIPTION CJThe FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2FEATURE F 2 30 0 1
Datasheet: FTK84D
, FTK7N60DD
, FTK7N60F
, FTK7N60P
, FTK7N65P
, FTK7N65F
, FTK7N65DD
, FTK75N75
, AO4468
, FTK10N65F
, FTK10N65P
, FTK123
, FTK630P
, FTK630F
, FTK7000
, FTK7002
, FTK7002D
.
