IRF5305S Datasheet. Equivalente

 ..1. Size:700K  international rectifier
 irf5305lpbf irf5305spbf.pdf

PD - 95957 IRF5305S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE

 ..2. Size:700K  international rectifier
 irf5305spbf irf5305lpbf.pdf

PD - 95957 IRF5305S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE

 ..3. Size:171K  international rectifier
 irf5305s.pdf

PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 0.1. Size:2441K  cn vbsemi
 irf5305str.pdf

IRF5305STR www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Loa

 7.1. Size:124K  international rectifier
 irf5305.pdf

PD - 91385B IRF5305 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.06 P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

 7.2. Size:182K  international rectifier
 irf5305pbf.pdf

PD - 94788 IRF5305PbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.06 P-Channel G Fully Avalanche Rated ID = -31A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

 7.3. Size:241K  inchange semiconductor
 irf5305.pdf

isc P-Channel MOSFET Transistor IRF5305,IIRF5305 FEATURES Static drain-source on-resistance RDS(on) 0.06 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliab