All MOSFET. IRF5305S Datasheet

 

IRF5305S MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF5305S

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: D2PAK

IRF5305S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF5305S Datasheet (PDF)

1.1. irf5305s.pdf Size:171K _international_rectifier

IRF5305S IRF5305S

PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

1.2. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

IRF5305S IRF5305S

PD - 95957 IRF5305S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE

 3.1. irf5305.pdf Size:124K _international_rectifier

IRF5305S IRF5305S

PD - 91385B IRF5305 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast Switching RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

3.2. irf5305pbf.pdf Size:182K _international_rectifier

IRF5305S IRF5305S

PD - 94788 IRF5305PbF HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.06Ω P-Channel G Fully Avalanche Rated ID = -31A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

 3.3. irf5305.pdf Size:241K _inchange_semiconductor

IRF5305S IRF5305S

isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliab

Datasheet: IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF630 , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 .

 

 
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