FTK70N06 Todos los transistores

 ..1. Size:570K  first silicon
 ftk70n06.pdf

SEMICONDUCTOR FTK70N06 TECHNICAL DATA 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 15 m Features ID = 70 A RDS(on) (Max 0.015 )@VGS =10V Gate Charge (Typical 39nC) TO-220 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested 1 2 3 Maximum Junction Temperature Range (175 C) 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC

 9.1. Size:565K  first silicon
 ftk7002e.pdf

SEMICONDUCTOR FTK7002E TECHNICAL DATA Small Signal MOSFET 115 mAmps, 60 Volts N Channel SOT 23 3 Features 2 1) Low on-resistance. (MAX 7.5 ) 1 2) Fast switching speed. 3) Low-voltage drive. SOT 23 (TO 236AB) 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 7) Esd Protected 2000V Device Marking and Ordering Information

 9.2. Size:408K  first silicon
 ftk7002d.pdf

SEMICONDUCTOR FTK7002D TECHNICAL DATA Dual Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SC-88 We declare that the material of product are Halogen Free and compliance with RoHS requirements. ESD Protected 1000V MAXIMUM RATINGS Rating Symbol Value Unit 3 2 1 Drain-Source Voltage VDSS 60 Vdc D2 G1 S1 Drain-Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current ID

 9.3. Size:728K  first silicon
 ftk7002u.pdf

SEMICONDUCTOR FTK7002U TECHNICAL DATA Small Signal MOSFET 115 mAmps, 60 Volts 3 N Channel SOT 323 2 We declare that the material of product are Halogen Free and 1 compliance with RoHS requirements. SOT-323 ESD Protected 1000V MAXIMUM RATINGS(Ta = 25 ) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS VDGR 60 Vdc Simplifie

 9.4. Size:285K  first silicon
 ftk7002en.pdf

 9.5. Size:192K  first silicon
 ftk7002.pdf

SEMICONDUCTOR FTK7002 TECHNICAL DATA Small Signal MOSFET 115 mAmps, 60 Volts 3 N Channel SOT 23 2 We declare that the material of product are Halogen Free and 1 compliance with RoHS requirements. SOT 23 (TO 236AB) ESD Protected 1000V MAXIMUM RATINGS Rating Symbol Value Unit Simplified Schematic Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1

 9.6. Size:148K  first silicon
 ftk7000.pdf

SEMICONDUCTOR FTK7000 TECHNICAL DATA B C FTK7000 MOSFET (N-Channel) DIM MILLIMETERS A 4.70 MAX E FEATURES B 4.80 MAX G C 3.70 MAX D High density cell design for low RDS(ON) D 0.55 MAX E 1.00 F 1.27 Voltage controlled small signal switch G 0.85 H 0.45 _ Rugged and reliable H J 14.00 0.50 L 2.30 F F M 0.51 MAX High saturation current capability 1. SOURCE 1 2 3

 9.7. Size:364K  first silicon
 ftk7002k.pdf

SEMICONDUCTOR FTK7002K TECHNICAL DATA Small Signal MOSFET 380 mAmps, 60 Volts N Channel SOT 23 3 Features ESD Protected 2 1 Low RDS(on) Surface Mount Package SOT 23 (TO 236AB) This is a Pb- Free Device We declare that the material of product are Halogen Free and compliance with RoHS requirements. Applications Low Side Load Switch Level