FTK70N06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FTK70N06
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 147 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 70 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 40 nC
Время нарастания (tr): 200 ns
Выходная емкость (Cd): 800 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: TO220
FTK70N06 Datasheet (PDF)
ftk70n06.pdf
SEMICONDUCTORFTK70N06TECHNICAL DATA60V N-Channel MOSFETBVDSS = 60 VRDS(on) = 15 mFeaturesID = 70 ARDS(on) (Max 0.015 )@VGS =10VGate Charge (Typical 39nC)TO-220 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested123Maximum Junction Temperature Range (175C)1.Gate 2. Drain 3. SourceDGSAbsolute Maximum Ratings TC
ftk7002e.pdf
SEMICONDUCTORFTK7002ETECHNICAL DATASmall Signal MOSFET115 mAmps, 60 VoltsNChannel SOT233Features 21) Low on-resistance. (MAX 7.5)12) Fast switching speed.3) Low-voltage drive.SOT 23 (TO236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.7) Esd Protected : 2000VDevice Marking and Ordering Information
ftk7002d.pdf
SEMICONDUCTORFTK7002DTECHNICAL DATADual Small Signal MOSFET115 mAmps, 60 VoltsN-Channel SC-88 We declare that the material of product are Halogen Free andcompliance with RoHS requirements. ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 M ) VDGR 60 VdcDrain Current ID
ftk7002u.pdf
SEMICONDUCTORFTK7002UTECHNICAL DATASmall Signal MOSFET115 mAmps, 60 Volts3NChannel SOT3232 We declare that the material of product are Halogen Free and 1compliance with RoHS requirements.SOT-323 ESD Protected:1000VMAXIMUM RATINGS(Ta = 25 )Rating Symbol Value UnitDrainSource Voltage VDSS 60VdcDrainGate Voltage (RGS VDGR 60VdcSimplifie
ftk7002en.pdf
SEMICONDUCTORFTK7002ENTECHNICAL DATASmall Signal MOSFET30 V, 154 mA, Single, N-Channel, GateESD Protection, SC-893Features Low Gate Charge for Fast Switching1 Small 1.6 X 1.6 mm Footprint2 ESD Protected Gate We declare that the material of product is ROHS compliant SC-89and halogen free.Applications Power Management Load Switch Level Shift
ftk7002.pdf
SEMICONDUCTORFTK7002TECHNICAL DATASmall Signal MOSFET115 mAmps, 60 Volts3NChannel SOT232 We declare that the material of product are Halogen Free and 1compliance with RoHS requirements.SOT 23 (TO236AB) ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit Simplified SchematicDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1
ftk7000.pdf
SEMICONDUCTORFTK7000TECHNICAL DATAB CFTK7000 MOSFET (N-Channel) DIM MILLIMETERSA 4.70 MAXEFEATURES B 4.80 MAXGC 3.70 MAXD High density cell design for low RDS(ON) D 0.55 MAXE 1.00F 1.27 Voltage controlled small signal switch G 0.85H 0.45_ Rugged and reliable HJ 14.00 0.50L 2.30F FM 0.51 MAX High saturation current capability 1. SOURCE1 2 3
ftk7002k.pdf
SEMICONDUCTORFTK7002KTECHNICAL DATASmall Signal MOSFET 380 mAmps, 60 VoltsNChannel SOT233Features ESD Protected 21 Low RDS(on) Surface Mount PackageSOT 23 (TO236AB) This is a Pb- Free Device We declare that the material of product are Halogen Free andcompliance with RoHS requirements.Applications Low Side Load Switch Level
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