IRF530A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF530A 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Encapsulados: TO220
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IRF530A datasheet
..1. Size:254K fairchild semi
irf530a.pdf 
IRF530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area TO-220 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sourc
..2. Size:944K samsung
irf530a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum
..3. Size:370K onsemi
irf530a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.2. Size:173K motorola
irf530 mot.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain
8.4. Size:700K international rectifier
irf5305lpbf irf5305spbf.pdf
PD - 95957 IRF5305S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE
8.5. Size:279K international rectifier
irf530nspbf irf530nlpbf.pdf
PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 90m G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi
8.6. Size:2177K international rectifier
irf530pbf.pdf
PD - 94931 IRF530PbF Lead-Free 1/8/04 Document Number 91019 www.vishay.com 1 IRF530PbF Document Number 91019 www.vishay.com 2 IRF530PbF Document Number 91019 www.vishay.com 3 IRF530PbF Document Number 91019 www.vishay.com 4 IRF530PbF Document Number 91019 www.vishay.com 5 IRF530PbF Document Number 91019 www.vishay.com 6 IRF530PbF TO-220AB Package Outline D
8.7. Size:700K international rectifier
irf5305spbf irf5305lpbf.pdf
PD - 95957 IRF5305S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE
8.8. Size:197K international rectifier
irf530s.pdf
IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt Rating Qgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating Temperature Qgd (nC) 11 Fast Switching Configu
8.9. Size:171K international rectifier
irf5305s.pdf
PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
8.10. Size:1851K international rectifier
irf530spbf.pdf
PD- 95982 IRF530SPbF Lead-Free 12/21/04 Document Number 91020 www.vishay.com 1 IRF530SPbF Document Number 91020 www.vishay.com 2 IRF530SPbF Document Number 91020 www.vishay.com 3 IRF530SPbF Document Number 91020 www.vishay.com 4 IRF530SPbF Document Number 91020 www.vishay.com 5 IRF530SPbF Document Number 91020 www.vishay.com 6 IRF530SPbF Peak Diode Recovery
8.11. Size:124K international rectifier
irf5305.pdf
PD - 91385B IRF5305 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.06 P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
8.12. Size:182K international rectifier
irf5305pbf.pdf
PD - 94788 IRF5305PbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.06 P-Channel G Fully Avalanche Rated ID = -31A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe
8.13. Size:178K international rectifier
irf530ns.pdf
PD - 91352A IRF530NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175 C Operating Temperature RDS(on) = 0.11 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o
8.14. Size:183K international rectifier
irf530npbf.pdf
PD - 94962 IRF530NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 90m l Fast Switching G l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremel
8.15. Size:279K international rectifier
irf530nspbf.pdf
PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 90m G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi
8.16. Size:212K international rectifier
irf530n.pdf
PD - 91351 IRF530N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 90m G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc
8.17. Size:98K philips
irf530n 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 A g RDS(ON) 110 m s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect po
8.18. Size:53K st
irf530.pdf
IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530 100 V
8.19. Size:77K st
irf530fp.pdf
IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530FP 100 V
8.23. Size:171K vishay
irf530s sihf530s.pdf
IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt Rating Qgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating Temperature Qgd (nC) 11 Fast Switching Configu
8.24. Size:201K vishay
irf530 sihf530.pdf
IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.16 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 26 COMPLIANT Fast Switching Qgs (nC) 5.5 Ease of Paralleling Qgd (nC) 11 Simple Drive Requirements Configuration Single Complian
8.25. Size:74K intersil
irf530 rf1s530sm.pdf
IRF530, RF1S530SM Data Sheet November 1999 File Number 1575.6 14A, 100V, 0.160 Ohm, N-Channel Power Features MOSFETs 14A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.160 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th
8.26. Size:2441K cn vbsemi
irf5305str.pdf
IRF5305STR www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Loa
8.27. Size:848K cn vbsemi
irf530s.pdf
IRF530S www.VBsemi.tw www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.100 at VGS = 10 V 100 20 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET
8.28. Size:854K cn vbsemi
irf530ns.pdf
IRF530NS www.VBsemi.tw www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.100 at VGS = 10 V 100 20 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET
8.29. Size:808K cn vbsemi
irf530n.pdf
IRF530N www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXI
8.30. Size:1248K cn minos
irf530.pdf
Green Product IRF530 100V N-Channel Power MOSFET KEY CHARACTERISTICS DESCRIPTION V = 100V,I = 15A DS D The IRF530 uses advanced trench technology to provide R
8.31. Size:235K inchange semiconductor
irf530.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF530 FEATURES Low R DS(on) V Rated at 20V GS Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power suppli
8.32. Size:241K inchange semiconductor
irf5305.pdf
isc P-Channel MOSFET Transistor IRF5305,IIRF5305 FEATURES Static drain-source on-resistance RDS(on) 0.06 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliab
8.33. Size:258K inchange semiconductor
irf530ns.pdf
Isc N-Channel MOSFET Transistor IRF530NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
8.34. Size:245K inchange semiconductor
irf530n.pdf
isc N-Channel MOSFET Transistor IRF530N IIRF530N FEATURES Static drain-source on-resistance RDS(on) 0.09 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
8.35. Size:256K inchange semiconductor
irf530nl.pdf
Isc N-Channel MOSFET Transistor IRF530NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100
Otros transistores... IRF5210L, IRF5210S, IRF522, IRF523, IRF530, IRF5305, IRF5305L, IRF5305S, IRF1404, IRF530FI, IRF530N, IRF530NL, IRF530NS, IRF531, IRF532, IRF533, IRF540
