All MOSFET. IRF530A Datasheet

 

IRF530A Datasheet and Replacement


   Type Designator: IRF530A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO220
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IRF530A Datasheet (PDF)

 ..1. Size:254K  fairchild semi
irf530a.pdf pdf_icon

IRF530A

IRF530AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.092 (Typ.)1231.Gate 2. Drain 3. Sourc

 ..2. Size:944K  samsung
irf530a.pdf pdf_icon

IRF530A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

 ..3. Size:370K  onsemi
irf530a.pdf pdf_icon

IRF530A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:166K  motorola
irf530.rev1.1.pdf pdf_icon

IRF530A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF530/DProduct PreviewIRF530TMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high14 AMPERESenergy in the avalanche and commutation modes. This new energy100 VOLTSefficient design also offers a drainto

Datasheet: IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF1404 , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 .

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