FTK6014A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FTK6014A Datasheet (PDF)

..1. Size:277K first silicon
ftk6014a.pdf pdf_icon

SEMICONDUCTORFTK6014ATECHNICAL DATAFeathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description: The FTK6014A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability

7.1. Size:473K first silicon
ftk6014.pdf pdf_icon

SEMICONDUCTORFTK6014TECHNICAL DATAFeathers:ID =60A Advanced trench process technologyBV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and currentDescription:The FTK6014 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device re

9.1. Size:341K first silicon
ftk60n04d.pdf pdf_icon

SEMICONDUCTORFTK60N04DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

9.2. Size:455K first silicon
ftk60p05s.pdf pdf_icon

SEMICONDUCTOR FTK60P05STECHNICAL DATAP-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8-5A 10V -60V 80m@-DescriptionThe FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

Otros transistores... FTK730F , FTK730P , FTK7328 , FTK7509 , FTK7510 , FTK7510F , FTK7510P , FTK6014 , IRF630 , FTK60N04D , FTK60P05S , FTK6401 , FTK640F , FTK640P , FTK6601 , FTK6601S , FTK6808 .