Справочник MOSFET. FTK6014A

 

FTK6014A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FTK6014A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14.2 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TO263

 Аналог (замена) для FTK6014A

 

 

FTK6014A Datasheet (PDF)

 ..1. Size:277K  first silicon
 ftk6014a.pdf

FTK6014A FTK6014A

SEMICONDUCTORFTK6014ATECHNICAL DATAFeathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description: The FTK6014A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability

 7.1. Size:473K  first silicon
 ftk6014.pdf

FTK6014A FTK6014A

SEMICONDUCTORFTK6014TECHNICAL DATAFeathers:ID =60A Advanced trench process technologyBV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and currentDescription:The FTK6014 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device re

 9.1. Size:341K  first silicon
 ftk60n04d.pdf

FTK6014A FTK6014A

SEMICONDUCTORFTK60N04DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

 9.2. Size:455K  first silicon
 ftk60p05s.pdf

FTK6014A FTK6014A

SEMICONDUCTOR FTK60P05STECHNICAL DATAP-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8-5A 10V -60V 80m@-DescriptionThe FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

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