FTK60P05S Todos los transistores

 ..1. Size:455K  first silicon
 ftk60p05s.pdf

SEMICONDUCTOR FTK60P05S TECHNICAL DATA P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8 -5A 10V -60V 80m @- Description The FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

 9.1. Size:277K  first silicon
 ftk6014a.pdf

SEMICONDUCTOR FTK6014A TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The FTK6014A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability

 9.2. Size:473K  first silicon
 ftk6014.pdf

SEMICONDUCTOR FTK6014 TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The FTK6014 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device re

 9.3. Size:341K  first silicon
 ftk60n04d.pdf

SEMICONDUCTOR FTK60N04D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0