FTK60P05S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTK60P05S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOP8

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FTK60P05S Datasheet (PDF)

..1. Size:455K first silicon
ftk60p05s.pdf

SEMICONDUCTOR FTK60P05STECHNICAL DATAP-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8-5A 10V -60V 80m@-DescriptionThe FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

9.1. Size:277K first silicon
ftk6014a.pdf

SEMICONDUCTORFTK6014ATECHNICAL DATAFeathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description: The FTK6014A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability

9.2. Size:473K first silicon
ftk6014.pdf

SEMICONDUCTORFTK6014TECHNICAL DATAFeathers:ID =60A Advanced trench process technologyBV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and currentDescription:The FTK6014 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device re

9.3. Size:341K first silicon
ftk60n04d.pdf

SEMICONDUCTORFTK60N04DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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