FTK60P05S Specs and Replacement

Type Designator: FTK60P05S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOP8

FTK60P05S substitution

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FTK60P05S datasheet

 ..1. Size:455K  first silicon
 ftk60p05s.pdf pdf_icon

FTK60P05S

SEMICONDUCTOR FTK60P05S TECHNICAL DATA P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8 -5A 10V -60V 80m @- Description The FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application ... See More ⇒

 9.1. Size:277K  first silicon
 ftk6014a.pdf pdf_icon

FTK60P05S

SEMICONDUCTOR FTK6014A TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The FTK6014A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability... See More ⇒

 9.2. Size:473K  first silicon
 ftk6014.pdf pdf_icon

FTK60P05S

SEMICONDUCTOR FTK6014 TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The FTK6014 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device re... See More ⇒

 9.3. Size:341K  first silicon
 ftk60n04d.pdf pdf_icon

FTK60P05S

SEMICONDUCTOR FTK60N04D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0... See More ⇒

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Detailed specifications: FTK7328, FTK7509, FTK7510, FTK7510F, FTK7510P, FTK6014, FTK6014A, FTK60N04D, AO3400, FTK6401, FTK640F, FTK640P, FTK6601, FTK6601S, FTK6808, FTK6N70P, FTK6N70F

Keywords - FTK60P05S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.