FTK50N10P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK50N10P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 265 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO220

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FTK50N10P datasheet

 ..1. Size:202K  first silicon
 ftk50n10p.pdf pdf_icon

FTK50N10P

SEMICONDUCTOR FTK50N10P TECHNICAL DATA N-Channel Power MOSFET (100V/50A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 100 V DS

 8.1. Size:333K  first silicon
 ftk50n03d.pdf pdf_icon

FTK50N10P

SEMICONDUCTOR FTK50N03D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK50N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 8.2. Size:336K  first silicon
 ftk50n06d.pdf pdf_icon

FTK50N10P

SEMICONDUCTOR FTK50N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 8.3. Size:222K  first silicon
 ftk50n06 ftk50n06p f.pdf pdf_icon

FTK50N10P

SEMICONDUCTOR FTK50N06P / F TECHNICAL DATA Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET P 1 TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F threshold voltages of 4 volt. 1 It is mainly suitable electronic

MOSTRAR MÁS

Otros transistores... FTK6808, FTK6N70P, FTK6N70F, FTK6N70I, FTK6N70D, FTK50N06D, FTK50N06DD, FTK50N06F, 2SK3878, FTK50P03PDFN56, FTK55P30D, FTK5903DC, FTK5N50D, FTK5N80DD, FTK5N80F, FTK5N80P, FTK50N03D