FTK50N10P. Аналоги и основные параметры

Наименование производителя: FTK50N10P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 63 ns

Cossⓘ - Выходная емкость: 265 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm

Тип корпуса: TO220

Аналог (замена) для FTK50N10P

- подборⓘ MOSFET транзистора по параметрам

 

FTK50N10P даташит

 ..1. Size:202K  first silicon
 ftk50n10p.pdf pdf_icon

FTK50N10P

SEMICONDUCTOR FTK50N10P TECHNICAL DATA N-Channel Power MOSFET (100V/50A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 100 V DS

 8.1. Size:333K  first silicon
 ftk50n03d.pdf pdf_icon

FTK50N10P

SEMICONDUCTOR FTK50N03D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK50N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 8.2. Size:336K  first silicon
 ftk50n06d.pdf pdf_icon

FTK50N10P

SEMICONDUCTOR FTK50N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 8.3. Size:222K  first silicon
 ftk50n06 ftk50n06p f.pdf pdf_icon

FTK50N10P

SEMICONDUCTOR FTK50N06P / F TECHNICAL DATA Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET P 1 TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F threshold voltages of 4 volt. 1 It is mainly suitable electronic

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FTK6808, FTK6N70P, FTK6N70F, FTK6N70I, FTK6N70D, FTK50N06D, FTK50N06DD, FTK50N06F, 2SK3878, FTK50P03PDFN56, FTK55P30D, FTK5903DC, FTK5N50D, FTK5N80DD, FTK5N80F, FTK5N80P, FTK50N03D