IRF530NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF530NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 37(max) nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: TO262

Búsqueda de reemplazo de MOSFET IRF530NL

IRF530NL Datasheet (PDF)

..1. Size:279K infineon
irf530nspbf irf530nlpbf.pdf

PD - 95100IRF530NSPbFIRF530NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90mGl Fast Switchingl Fully Avalanche RatedID = 17Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achi

..2. Size:256K inchange semiconductor
irf530nl.pdf

Isc N-Channel MOSFET Transistor IRF530NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

7.1. Size:178K international rectifier
irf530ns.pdf

PD - 91352AIRF530NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175C Operating TemperatureRDS(on) = 0.11G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low o

7.2. Size:183K international rectifier
irf530npbf.pdf

PD - 94962IRF530NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90ml Fast SwitchingGl Fully Avalanche RatedID = 17Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremel

7.3. Size:279K international rectifier
irf530nspbf.pdf

7.4. Size:212K international rectifier
irf530n.pdf

PD - 91351IRF530NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 90mG Fast Switching Fully Avalanche RatedID = 17ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistanc

7.5. Size:98K philips
irf530n 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 AgRDS(ON) 110 msGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel enhancement mode PIN DESCRIPTIONtabfield-effect po

7.6. Size:183K infineon
irf530npbf.pdf

7.7. Size:854K cn vbsemi
irf530ns.pdf

IRF530NSwww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFET

7.8. Size:808K cn vbsemi
irf530n.pdf

IRF530Nwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXI

7.9. Size:258K inchange semiconductor
irf530ns.pdf

Isc N-Channel MOSFET Transistor IRF530NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

7.10. Size:245K inchange semiconductor
irf530n.pdf

isc N-Channel MOSFET Transistor IRF530NIIRF530NFEATURESStatic drain-source on-resistance:RDS(on) 0.09Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Otros transistores... IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF640N , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRF540N .

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