All MOSFET. IRF530NL Datasheet

 

IRF530NL MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF530NL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 79 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: TO262

IRF530NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF530NL Datasheet (PDF)

3.1. irf530n 1.pdf Size:98K _philips

IRF530NL
IRF530NL

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect po

3.2. irf530n.pdf Size:212K _international_rectifier

IRF530NL
IRF530NL

PD - 91351 IRF530N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 90mΩ G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 3.3. irf530npbf.pdf Size:183K _international_rectifier

IRF530NL
IRF530NL

PD - 94962 IRF530NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 90mΩ l Fast Switching G l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremel

3.4. irf530nspbf.pdf Size:279K _international_rectifier

IRF530NL
IRF530NL

PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 90mΩ G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi

 3.5. irf530ns.pdf Size:178K _international_rectifier

IRF530NL
IRF530NL

PD - 91352A IRF530NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature RDS(on) = 0.11Ω G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

3.6. irf530n.pdf Size:245K _inchange_semiconductor

IRF530NL
IRF530NL

isc N-Channel MOSFET Transistor IRF530N,IIRF530N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

3.7. irf530ns.pdf Size:258K _inchange_semiconductor

IRF530NL
IRF530NL

Isc N-Channel MOSFET Transistor IRF530NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Datasheet: IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF1404 , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRF540N .

 

 
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